NCE50N540K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE50N540K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 74 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 10 nS
Cossⓘ - Capacitancia de salida: 21 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de NCE50N540K MOSFET
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NCE50N540K datasheet
..1. Size:740K ncepower
nce50n540k.pdf 
NCE50N540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus
5.1. Size:794K ncepower
nce50n540f.pdf
NCE50N540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 470 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.3 nC power conversion, and ind
8.1. Size:793K ncepower
nce50nf600k.pdf
NCE50NF600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.2. Size:812K ncepower
nce50nf180.pdf
NCE50NF180 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indust
8.3. Size:797K ncepower
nce50nf180i.pdf
NCE50NF180I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
8.4. Size:760K ncepower
nce50n2k2f.pdf
NCE50N2K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
8.5. Size:786K ncepower
nce50nf520k.pdf
NCE50NF520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
8.6. Size:784K ncepower
nce50nf330i.pdf
NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
8.7. Size:716K ncepower
nce50nf130v.pdf
NCE50NF130V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
8.8. Size:853K ncepower
nce50nf220f.pdf
NCE50NF220F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
8.9. Size:787K ncepower
nce50nf600i.pdf
NCE50NF600I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.10. Size:784K ncepower
nce50nf220k.pdf
NCE50NF220K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
8.11. Size:794K ncepower
nce50nf520.pdf
NCE50NF520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus
8.12. Size:778K ncepower
nce50nf220i.pdf
NCE50NF220I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
8.13. Size:820K ncepower
nce50n1k8f.pdf
NCE50N1K8F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
8.14. Size:807K ncepower
nce50n1k8k.pdf
NCE50N1K8K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
8.15. Size:712K ncepower
nce50nf130f.pdf
NCE50NF130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
8.16. Size:815K ncepower
nce50nf220d.pdf
NCE50NF220D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and ind
8.17. Size:800K ncepower
nce50n1k2k.pdf
NCE50N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and indus
8.18. Size:722K ncepower
nce50nf130k.pdf
NCE50NF130K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
8.19. Size:816K ncepower
nce50nf520d.pdf
NCE50NF520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
8.20. Size:744K ncepower
nce50nf130ll.pdf
NCE50NF130LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and
8.21. Size:809K ncepower
nce50nf330f.pdf
NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
8.22. Size:804K ncepower
nce50nf180k.pdf
NCE50NF180K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
8.23. Size:823K ncepower
nce50n1k8i.pdf
NCE50N1K8I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
8.24. Size:728K ncepower
nce50nf130d.pdf
NCE50NF130D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
8.25. Size:799K ncepower
nce50nf330.pdf
NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu
8.26. Size:753K ncepower
nce50n2k2r.pdf
NCE50N2K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
8.27. Size:823K ncepower
nce50nf600d.pdf
NCE50NF600D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.28. Size:780K ncepower
nce50nf520i.pdf
NCE50NF520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
8.29. Size:821K ncepower
nce50nf330d.pdf
NCE50NF330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
8.30. Size:705K ncepower
nce50n2k2i.pdf
NCE50N2K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
8.31. Size:741K ncepower
nce50n2k2d.pdf
NCE50N2K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
8.32. Size:801K ncepower
nce50nf180d.pdf
NCE50NF180D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
8.33. Size:712K ncepower
nce50n2k2k.pdf
NCE50N2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 2000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.4 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 4.2 nC power conversion, and ind
8.34. Size:838K ncepower
nce50n1k8d.pdf
NCE50N1K8D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
8.35. Size:737K ncepower
nce50nf130t.pdf
NCE50NF130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 23.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 24.5 nC power conversion, and i
8.36. Size:795K ncepower
nce50nf220.pdf
NCE50NF220 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indu
8.37. Size:820K ncepower
nce50nf600r.pdf
NCE50NF600R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.38. Size:856K ncepower
nce50nf180f.pdf
NCE50NF180F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 150 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and indus
8.39. Size:820K ncepower
nce50n1k8r.pdf
NCE50N1K8R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 1.9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 3.3 nC power conversion, and ind
8.40. Size:791K ncepower
nce50nf330k.pdf
NCE50NF330K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind
8.41. Size:805K ncepower
nce50nf520f.pdf
NCE50NF520F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu
8.42. Size:810K ncepower
nce50nf600f.pdf
NCE50NF600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 520 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
Otros transistores... NCE50N1K8I, NCE50N1K8K, NCE50N1K8R, NCE50N2K2D, NCE50N2K2F, NCE50N2K2I, NCE50N2K2K, NCE50N2K2R, P55NF06, NCE50NF130D, NCE50NF130F, NCE50NF130K, NCE50NF130LL, NCE50NF130T, NCE50NF130V, NCE50NF180, NCE50NF180D
