NCE50NF330K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE50NF330K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 93 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 36 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm

Encapsulados: TO-252

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NCE50NF330K datasheet

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 nce50nf330k.pdf pdf_icon

NCE50NF330K

NCE50NF330K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 4.1. Size:784K  ncepower
 nce50nf330i.pdf pdf_icon

NCE50NF330K

NCE50NF330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 4.2. Size:809K  ncepower
 nce50nf330f.pdf pdf_icon

NCE50NF330K

NCE50NF330F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and ind

 4.3. Size:799K  ncepower
 nce50nf330.pdf pdf_icon

NCE50NF330K

NCE50NF330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 280 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.5 nC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE50NF220, NCE50NF220F, NCE50NF220I, NCE50NF220K, NCE50NF330, NCE50NF330D, NCE50NF330F, NCE50NF330I, 13N50, NCE50NF520, NCE50NF520D, NCE50NF520F, NCE50NF520I, NCE50NF520K, NCE50NF600D, NCE50NF600F, NCE50NF600I