NCE50NF520I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE50NF520I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 73 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.2 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 20 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm

Encapsulados: TO-251

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NCE50NF520I datasheet

 ..1. Size:780K  ncepower
 nce50nf520i.pdf pdf_icon

NCE50NF520I

NCE50NF520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 4.1. Size:786K  ncepower
 nce50nf520k.pdf pdf_icon

NCE50NF520I

NCE50NF520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 4.2. Size:794K  ncepower
 nce50nf520.pdf pdf_icon

NCE50NF520I

NCE50NF520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indus

 4.3. Size:816K  ncepower
 nce50nf520d.pdf pdf_icon

NCE50NF520I

NCE50NF520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 550 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7.2 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE50NF330, NCE50NF330D, NCE50NF330F, NCE50NF330I, NCE50NF330K, NCE50NF520, NCE50NF520D, NCE50NF520F, IRF1010E, NCE50NF520K, NCE50NF600D, NCE50NF600F, NCE50NF600I, NCE50NF600K, NCE50NF600R, NCE5520Q, NCE55P15