NCE6065AG Todos los transistores

 ..1. Size:654K  ncepower
 nce6065ag.pdf

NCE6065AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065AG uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =65A DS D R

 7.1. Size:654K  ncepower
 nce6065g.pdf

NCE6065G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6065G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =65A DS D R

 9.1. Size:1652K  1
 nce60td65bt.pdf

PbFreeProduct NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.2. Size:410K  ncepower
 nce60p16aq.pdf

http //www.ncepower.com NCE60P16AQ NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P16AQ uses advanced trench technology to provide General Features excellent R , This device is suitable for use as a load switch DS(ON) V = -60V,I = -16A DS D or power management. R

 9.3. Size:665K  ncepower
 nce60nf730i.pdf

NCE60NF730I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 9.4. Size:455K  ncepower
 nce6030k.pdf

Pb Free Product http //www.ncepower.com NCE6030K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6030K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =30A RDS(ON)

 9.5. Size:403K  ncepower
 nce603s.pdf

Pb Free Product http //www.ncepower.com NCE603S N and P-Channel Enhancement Mode Power MOSFET Description The NCE603S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Schematic diagram General Features N-Channel VDS = 6

 9.6. Size:721K  ncepower
 nce60n390f.pdf

NCE60N390F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 9.7. Size:407K  ncepower
 nce6075k.pdf

Pb Free Product http //www.ncepower.com NCE6075K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 9.8. Size:432K  ncepower
 nce6020ak.pdf

Pb Free Product http //www.ncepower.com NCE6020AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

 9.9. Size:679K  ncepower
 nce60nf200i.pdf

NCE60NF200I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 9.10. Size:814K  ncepower
 nce60n640f.pdf

NCE60N640F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 9.11. Size:978K  ncepower
 nce60np4035k.pdf

NCE60NP4035K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP4035K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =40A DS D R

 9.12. Size:394K  ncepower
 nce6008as.pdf

Pb Free Product http //www.ncepower.com NCE6008AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =8A Schematic diagram RDS(ON)

 9.13. Size:408K  ncepower
 nce60p02y.pdf

 9.14. Size:913K  ncepower
 nce60np2012k.pdf

NCE60NP2012K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =20A DS D R

 9.15. Size:641K  ncepower
 nce60n700d.pdf

NCE60N700D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.16. Size:595K  ncepower
 nce6080ek.pdf

NCE6080EK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080EK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R

 9.17. Size:411K  ncepower
 nce60p05n.pdf

http //www.ncepower.com NCE60P05N NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05N uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)

 9.18. Size:929K  ncepower
 nce60nf040t.pdf

NCE60NF040T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 35 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 61 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 87 nC SMPS requirements for PFC,

 9.19. Size:363K  ncepower
 nce6075.pdf

Pb Free Product http //www.ncepower.com NCE6075 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6075 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 9.20. Size:356K  ncepower
 nce60p45ak.pdf

NCE60P45AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P45AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-45A RDS(ON)

 9.21. Size:854K  ncepower
 nce60np1515k.pdf

NCE60NP1515K http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE60NP1515K uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =15A DS D R

 9.22. Size:730K  ncepower
 nce60n390i.pdf

NCE60N390I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 9.23. Size:260K  ncepower
 nce6003m.pdf

Pb Free Product http //www.ncepower.com NCE6003M NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S General Feature Schematic diagram

 9.24. Size:364K  ncepower
 nce60p06s.pdf

http //www.ncepower.com NCE60P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-6A RDS(ON)

 9.25. Size:692K  ncepower
 nce60nf260d.pdf

NCE60NF260D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 9.26. Size:789K  ncepower
 nce60nf080f.pdf

NCE60NF080F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria

 9.27. Size:630K  ncepower
 nce60n670f.pdf

NCE60N670F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 620 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.4 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.28. Size:351K  ncepower
 nce60p45k.pdf

NCE60P45K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P45K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-45A RDS(ON)

 9.29. Size:282K  ncepower
 nce60p40f.pdf

NCE60P40F http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P40F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-40A RDS(ON)

 9.30. Size:335K  ncepower
 nce6020ai.pdf

 9.31. Size:611K  ncepower
 nce60p82ad.pdf

NCE60P82AD http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AD uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R

 9.32. Size:1658K  ncepower
 nce60td60bp.pdf

Pb Free Product NCE60TD60BP 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.33. Size:285K  ncepower
 nce60p09s.pdf

NCE60P09S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

 9.34. Size:244K  ncepower
 nce6003.pdf

Pb Free Product http //www.ncepower.com NCE6003 NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features

 9.35. Size:457K  ncepower
 nce60t2k2i.pdf

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 9.36. Size:793K  ncepower
 nce60n640k.pdf

NCE60N640K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 9.37. Size:328K  ncepower
 nce6012cs.pdf

Pb Free Product http //www.ncepower.com NCE6012CS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012CS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A Schematic diagram RDS(ON)

 9.38. Size:376K  ncepower
 nce6080d.pdf

http //www.ncepower.com NCE6080D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A Schematic diagram RDS(ON)

 9.39. Size:627K  ncepower
 nce60p50g.pdf

http //www.ncepower.com NCE60P50G NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P50G uses advanced trench technology and V =-60V,I =-50A DS D design to provide excellent R with low gate charge .This DS(ON) R =23m (typical) @ V =-10V DS(ON) GS device is well suited for high current load applications. High density cell design for ultra lo

 9.40. Size:749K  ncepower
 nce60n1k0d.pdf

NCE60N1K0D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 9.41. Size:653K  ncepower
 nce6045xg.pdf

http //www.ncepower.com NCE6045XG NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045XG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =7.4m (typical) @ V =10V DS(ON) GS R =11.4m (typical) @ V =4.5V Application DS(ON) GS

 9.42. Size:703K  ncepower
 nce60nf160v.pdf

NCE60NF160V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 9.43. Size:686K  ncepower
 nce60nf200k.pdf

NCE60NF200K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 9.44. Size:617K  ncepower
 nce60h10k.pdf

http //www.ncepower.com NCE60H10K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10K uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. General Features V =60V,I =100A Schematic diagram DS D R

 9.45. Size:715K  ncepower
 nce60n390k.pdf

NCE60N390K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 9.46. Size:468K  ncepower
 nce6080k.pdf

Pb Free Product NCE6080K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)

 9.47. Size:673K  ncepower
 nce60nf730k.pdf

NCE60NF730K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 9.48. Size:1838K  ncepower
 nce60td60bt.pdf

Pb Free Product NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.49. Size:643K  ncepower
 nce60nd03n.pdf

http //www.ncepower.com NCE60ND03N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 9.50. Size:655K  ncepower
 nce60h30t.pdf

http //www.ncepower.com NCE60H30T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H30T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =300A DS D R

 9.51. Size:697K  ncepower
 nce60nf200f.pdf

NCE60NF200F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 9.52. Size:767K  ncepower
 nce6004.pdf

http //www.ncepower.com NCE6004 NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6004 uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =4A DS D R

 9.53. Size:757K  ncepower
 nce60n1k0r.pdf

NCE60N1K0R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 9.54. Size:663K  ncepower
 nce6058k.pdf

http //www.ncepower.com NCE6058K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =58A DS D R

 9.55. Size:658K  ncepower
 nce60nf160k.pdf

NCE60NF160K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 9.56. Size:673K  ncepower
 nce6020al.pdf

 9.57. Size:347K  ncepower
 nce60p20k.pdf

http //www.ncepower.com NCE60P20K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-20A RDS(ON)

 9.58. Size:686K  ncepower
 nce60n700f.pdf

NCE60N700F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.59. Size:376K  ncepower
 nce60p05by.pdf

 9.60. Size:418K  ncepower
 nce60p18ak.pdf

 9.61. Size:683K  ncepower
 nce60p70d.pdf

NCE60P70D http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P70D uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =-60V,I =-70A DS D R

 9.62. Size:715K  ncepower
 nce60nf730r.pdf

NCE60NF730R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 9.63. Size:763K  ncepower
 nce60nf080.pdf

NCE60NF080 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industrial

 9.64. Size:624K  ncepower
 nce60p18aq.pdf

NCE60P18AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -18A DS D The NCE60P18AQ uses advanced trench technology to provide R

 9.65. Size:409K  ncepower
 nce60p08as.pdf

 9.66. Size:808K  ncepower
 nce60n640i.pdf

NCE60N640I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 9.67. Size:1011K  ncepower
 nce60np09s.pdf

NCE60NP09S http //www.ncepower.com NCE 60V Complementary MOSFET Description The NCE60NP09S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =9A DS D R

 9.68. Size:702K  ncepower
 nce60nf730d.pdf

NCE60NF730D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 9.69. Size:414K  ncepower
 nce6050ka.pdf

Pb Free Product http //www.ncepower.com NCE6050KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 9.70. Size:356K  ncepower
 nce6058.pdf

Pb Free Product http //www.ncepower.com NCE6058 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =58A RDS(ON)

 9.71. Size:351K  ncepower
 nce60h15a.pdf

http //www.ncepower.com NCE60H15A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 9.72. Size:492K  ncepower
 nce609.pdf

Pb Free Product http //www.ncepower.com NCE609 N and P-Channel Enhancement Mode Power MOSFET Description The NCE609 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features N-Channel Schematic diagram VDS =40V,ID

 9.73. Size:722K  ncepower
 nce60n390.pdf

NCE60N390 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industrial

 9.74. Size:716K  ncepower
 nce60nf200d.pdf

NCE60NF200D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 9.75. Size:656K  ncepower
 nce60p03r.pdf

http //www.ncepower.com NCE60P03R NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P03R uses advanced trench technology and design V =-60V,I =-3A DS D to provide excellent R with low gate charge .This device is DS(ON) R

 9.76. Size:383K  ncepower
 nce60p28ak.pdf

NCE60P28AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P28AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-28A RDS(ON)

 9.77. Size:684K  ncepower
 nce60nd18g.pdf

Pb Free Product http //www.ncepower.com NCE60ND18G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND18G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =18A DS D Schematic diagram R

 9.78. Size:424K  ncepower
 nce60p10k.pdf

Pb Free Product http //www.ncepower.com NCE60P10K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-10A RDS(ON)

 9.79. Size:638K  ncepower
 nce60p65k.pdf

http //www.ncepower.com NCE60P65K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P65K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-65A DS D R

 9.80. Size:688K  ncepower
 nce6020a.pdf

Pb Free Product http //www.ncepower.com NCE6020A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6020A uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =20A Schematic diagram DS D R

 9.81. Size:666K  ncepower
 nce60td60bp nce60td60bt.pdf

PbFreeProduct NCE60TD60BP,NCE60TD60BT 600V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE sat

 9.82. Size:445K  ncepower
 nce60p16ak.pdf

 9.83. Size:711K  ncepower
 nce6020aq.pdf

NCE6020AQ http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description General Features he NCE6020AQ uses advanced trench technology and design to V = 60V,I = 20A DS D provide excellent R with low gate charge. It can be used in a R

 9.84. Size:887K  ncepower
 nce60nf080t.pdf

NCE60NF080T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria

 9.85. Size:417K  ncepower
 nce6005as.pdf

Pb Free Product http //www.ncepower.com NCE6005AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS=60V,ID=5A RDS(ON)

 9.86. Size:746K  ncepower
 nce60nf260f.pdf

NCE60NF260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 9.87. Size:727K  ncepower
 nce60nf200.pdf

NCE60NF200 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and industr

 9.88. Size:404K  ncepower
 nce6012as.pdf

Pb Free Product http //www.ncepower.com NCE6012AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6012AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =12A RDS(ON)

 9.89. Size:340K  ncepower
 nce60h15ad.pdf

http //www.ncepower.com NCE60H15AD NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A Schematic diagram RDS(ON)

 9.90. Size:617K  ncepower
 nce60h10.pdf

http //www.ncepower.com NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R

 9.91. Size:704K  ncepower
 nce60nf260i.pdf

NCE60NF260I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 9.92. Size:737K  ncepower
 nce60n2k1f.pdf

NCE60N2K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 9.93. Size:754K  ncepower
 nce60nf420d.pdf

NCE60NF420D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind

 9.94. Size:616K  ncepower
 nce60nd45ag.pdf

NCE60ND45AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45AG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =9.4m (typical) @ V =10V DS(ON) GS R =13.4m (typical) @ V =4.5V Application DS(ON) GS

 9.95. Size:360K  ncepower
 nce6050a.pdf

Pb Free Product http //www.ncepower.com NCE6050A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 9.96. Size:900K  ncepower
 nce60nf031t.pdf

NCE60NF031T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 23 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 81 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 135 nC SMPS requirements for P

 9.97. Size:614K  ncepower
 nce60nd45xg.pdf

NCE60ND45XG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 60V,I =45A DS D The NCE60ND45XG uses advanced trench technology and R

 9.98. Size:712K  ncepower
 nce60nf260k.pdf

NCE60NF260K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indus

 9.99. Size:698K  ncepower
 nce60n700r.pdf

NCE60N700R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.100. Size:358K  ncepower
 nce60p25.pdf

Pb Free Product http //www.ncepower.com NCE60P25 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 9.101. Size:405K  ncepower
 nce60nd08s.pdf

http //www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS D R

 9.102. Size:628K  ncepower
 nce6080.pdf

http //www.ncepower.com NCE6080 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A Schematic diagram DS D R

 9.103. Size:457K  ncepower
 nce60t2k2k.pdf

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 9.104. Size:358K  ncepower
 nce60p04sn.pdf

NCE60P04SN http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04SN uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-4A RDS(ON)

 9.105. Size:607K  ncepower
 nce60h10d.pdf

http //www.ncepower.com NCE60H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10D uses advanced trench technology and design to provide excellent R with low gate charge. This DS(ON) device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =100A DS D R

 9.106. Size:288K  ncepower
 nce60p09as.pdf

NCE60P09AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-9A RDS(ON)

 9.107. Size:426K  ncepower
 nce6007s.pdf

Pb Free Product http //www.ncepower.com NCE6007S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =7A Schematic diagram RDS(ON)

 9.108. Size:303K  ncepower
 nce60p55k.pdf

http //www.ncepower.com NCE60P55K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P55K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-55A RDS(ON)

 9.109. Size:719K  ncepower
 nce60nf260.pdf

NCE60NF260 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 14 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

 9.110. Size:707K  ncepower
 nce6005an.pdf

NCE6005AN http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AN uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =5A DS D R

 9.111. Size:1696K  ncepower
 nce60td65bt.pdf

Pb Free Product NCE60TD65BT 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.112. Size:717K  ncepower
 nce60n370k.pdf

NCE60N370K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 335 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 9.113. Size:600K  ncepower
 nce6080ak.pdf

Pb Free Product NCE6080AK http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =6m (typical) @ V =10V Schematic diagram DS(ON) GS R =7m (typical) @ V =

 9.114. Size:492K  ncepower
 nce60p05r.pdf

http //www.ncepower.com NCE60P05R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P05R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-5A Schematic diagram RDS(ON)

 9.115. Size:993K  ncepower
 nce60np2016g.pdf

Pb Free Product http //www.ncepower.com NCE60NP2016G NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2016G uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features Schematic diagram N channel V =60V,I =20A DS D R

 9.116. Size:383K  ncepower
 nce6045g.pdf

Pb Free Product http //www.ncepower.com NCE6045G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6045G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =45A RDS(ON)

 9.117. Size:1576K  ncepower
 nce60td65bt4.pdf

 9.118. Size:341K  ncepower
 nce60nd45g.pdf

NCE60ND45G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)

 9.119. Size:724K  ncepower
 nce60nf420k.pdf

NCE60NF420K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind

 9.120. Size:891K  ncepower
 nce60nf019t.pdf

NCE60NF019T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 17 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 107 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 184 nC SMPS requirements for PF

 9.121. Size:457K  ncepower
 nce60t2k2i nce60t2k2k.pdf

NCE60T2K2I NCE60T2K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS@T jmax junction technology and design to provide excellent RDS(ON) R 1.8 DS(ON) TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 9.122. Size:417K  ncepower
 nce60p12k.pdf

 9.123. Size:597K  ncepower
 nce6080ed.pdf

http //www.ncepower.com NCE6080ED NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080ED uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A Schematic diagram DS D R

 9.124. Size:667K  ncepower
 nce60n700i.pdf

NCE60N700I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.125. Size:568K  ncepower
 nce60nf110.pdf

NCE60NF110 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC/

 9.126. Size:666K  ncepower
 nce60r360d nce60r360 nce60r360f.pdf

NCE60R360D,NCE60R360,NCE60R360F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON)MAX 360 m gate charge. This super junction MOSFET fits the industry s ID 11 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 9.127. Size:671K  ncepower
 nce6003xm.pdf

http //www.ncepower.com NCE6003XM NCE N-Channel Enhancement Mode Power MOSFET Description D The NCE6003XM uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) G use as a Battery protection or in other switching application. S General Features Schematic Diagram V =60V,I =3A DS D R

 9.128. Size:771K  ncepower
 nce60n1k0i.pdf

NCE60N1K0I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 9.129. Size:738K  ncepower
 nce60nf420i.pdf

NCE60NF420I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind

 9.130. Size:755K  ncepower
 nce60n2k1r.pdf

NCE60N2K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 9.131. Size:393K  ncepower
 nce6080a.pdf

Pb Free Product NCE6080A http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =80A RDS(ON)=6.5m (typical) @ VGS=10V Schematic diagram RDS(ON)=7.5m (typica

 9.132. Size:801K  ncepower
 nce6080at.pdf

Pb Free Product NCE6080AT http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G

 9.133. Size:713K  ncepower
 nce60n2k1d.pdf

NCE60N2K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 9.134. Size:717K  ncepower
 nce60n2k1k.pdf

NCE60N2K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 9.135. Size:704K  ncepower
 nce60n390d.pdf

NCE60N390D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 350 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 10 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13 nC power conversion, and industria

 9.136. Size:571K  ncepower
 nce60nf110f.pdf

NCE60NF110F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC

 9.137. Size:682K  ncepower
 nce60nf200t.pdf

NCE60NF200T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 180 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22.8 nC power conversion, and indust

 9.138. Size:657K  ncepower
 nce60h15at.pdf

http //www.ncepower.com NCE60H15AT NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15AT uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

 9.139. Size:752K  ncepower
 nce60n1k0k.pdf

NCE60N1K0K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 9.140. Size:675K  ncepower
 nce60p70g.pdf

http //www.ncepower.com NCE60P70G NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE60P70G uses advanced trench technology and V =-60V,I =-70A DS D design to provide excellent R with low gate charge .This R =11m (typical) @ V =-10V DS(ON) DS(ON) GS device is well suited for high current load applications. R =13m (typical) @ V =-4.5V DS(ON) GS

 9.141. Size:445K  ncepower
 nce60p12as.pdf

NCE60P12AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-60V,ID =-12A RDS(ON)

 9.142. Size:788K  ncepower
 nce60p14k.pdf

NCE60P14K http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P14K uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram V =-60V,I =-14A DS D R

 9.143. Size:766K  ncepower
 nce60nf420f.pdf

NCE60NF420F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and ind

 9.144. Size:731K  ncepower
 nce60nf420.pdf

NCE60NF420 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 380 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 13.7 nC power conversion, and indu

 9.145. Size:315K  ncepower
 nce6005ar.pdf

Pb Free Product http //www.ncepower.com NCE6005AR NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6005AR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A RDS(ON)

 9.146. Size:371K  ncepower
 nce60p07as.pdf

NCE60P07AS http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P07AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-7A Schematic diagram RDS(ON)

 9.147. Size:655K  ncepower
 nce60p09k.pdf

http //www.ncepower.com NCE60P09K NCE P-Channel Enhancement Mode Power MOSFET General Features Description V =-60V,I =-9A DS D The NCE60P09K uses advanced trench technology and design R

 9.148. Size:604K  ncepower
 nce6009xs.pdf

http //www.ncepower.com NCE6009XS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009XS uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =9A DS D Schematic diagram R

 9.149. Size:737K  ncepower
 nce60n2k1i.pdf

NCE60N2K1I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 1950 m DS(ON)TYP. and low gate charge and With a rapid recovery body I 1.8 A D diode.This super junction MOSFET fits the industry s AC-DC Qg 3.9 nC SMPS requirements for P

 9.150. Size:782K  ncepower
 nce60n640d.pdf

NCE60N640D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indus

 9.151. Size:706K  ncepower
 nce6003xy.pdf

http //www.ncepower.com NCE6003XY NCE N-Channel Enhancement Mode Power MOSFET D Description G The NCE6003XY uses advanced trench technology to provide excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R

 9.152. Size:309K  ncepower
 nce60p50.pdf

Pb Free Product http //www.ncepower.com NCE60P50 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 9.153. Size:636K  ncepower
 nce6042ag.pdf

NCE6042AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6042AG uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =42A Schematic diagram DS D R

 9.154. Size:757K  ncepower
 nce6080ai.pdf

http //www.ncepower.com NCE6080AI NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080AI uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =80A DS D R =5.5m (typical) @ V =10V Schematic diagram DS(ON) GS R =6.5m (typical) @ V =4.5V DS(ON) G

 9.155. Size:652K  ncepower
 nce60n700k.pdf

NCE60N700K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.156. Size:747K  ncepower
 nce60nf055.pdf

NCE60NF055 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industrial

 9.157. Size:749K  ncepower
 nce60nf080d.pdf

NCE60NF080D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 70 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 41 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 53 nC power conversion, and industria

 9.158. Size:388K  ncepower
 nce60h10f.pdf

Pb Free Product http //www.ncepower.com NCE60H10F NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 9.159. Size:975K  ncepower
 nce603583.pdf

NCE603583 http //www.ncepower.com NCE N&P-Channel complementary Power MOSFET Description The NCE603583 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features N channel Schematic diagram V =60V,I =40A DS D R

 9.160. Size:356K  ncepower
 nce60td120ut.pdf

PbFreeProduct NCE60TD120UT 1200V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 1200V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology Offering Very low V CE(sat) High speed sw

 9.161. Size:872K  ncepower
 nce60nf055t.pdf

NCE60NF055T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 9.162. Size:429K  ncepower
 nce6009as.pdf

Pb Free Product http //www.ncepower.com NCE6009AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6009AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

 9.163. Size:638K  ncepower
 nce60h18.pdf

http //www.ncepower.com NCE60H18 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H18 uses advanced trench technology and design to provide excellent R with low gate charge. This device is DS(ON) suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features V =60V,I =180A DS D R

 9.164. Size:665K  ncepower
 nce60p82af.pdf

NCE60P82AF http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features V =-60V,I =-41A Description DS D The NCE60P82AF uses advanced trench technology and design R

 9.165. Size:728K  ncepower
 nce60nf055d.pdf

NCE60NF055D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 9.166. Size:659K  ncepower
 nce60nd03s.pdf

http //www.ncepower.com NCE60ND03S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 9.167. Size:612K  ncepower
 nce6025q.pdf

NCE6025Q http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6025Q uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =25A DS D R

 9.168. Size:330K  ncepower
 nce6050ia.pdf

Pb Free Product http //www.ncepower.com NCE6050IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6050IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 9.169. Size:270K  ncepower
 nce6003y.pdf

Pb Free Product http //www.ncepower.com NCE6003Y NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003Y uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features

 9.170. Size:414K  ncepower
 nce60p14ak.pdf

 9.171. Size:685K  ncepower
 nce6045xag.pdf

 9.172. Size:610K  ncepower
 nce60h15t.pdf

http //www.ncepower.com NCE60H15T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H15T uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =150A DS D R

 9.173. Size:740K  ncepower
 nce60n1k0f.pdf

NCE60N1K0F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 880 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.3 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.5 nC power conversion, and indu

 9.174. Size:642K  ncepower
 nce6003x.pdf

http //www.ncepower.com NCE6003X NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE6003X uses advanced trench technology to provide G excellent R , low gate charge. This device is suitable for DS(ON) use as a Battery protection or in other switching application. S Schematic Diagram General Features V =60V,I =3A DS D R

 9.175. Size:288K  ncepower
 nce6010j.pdf

Pb Free Product http //www.ncepower.com NCE6010J NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6010J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =10A RDS(ON)

 9.176. Size:580K  ncepower
 nce60h28ll.pdf

http //www.ncepower.com NCE60H28LL NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE60H28LL uses advanced trench technology and V =60V ,I =280A DS D design to provide excellent R with low gate charge. It R

 9.177. Size:397K  ncepower
 nce60p25k.pdf

Pb Free Product http //www.ncepower.com NCE60P25K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-25A RDS(ON)

 9.178. Size:718K  ncepower
 nce60p82a.pdf

 9.179. Size:360K  ncepower
 nce60pd05s.pdf

NCE60PD05S http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE60PD05S uses advanced trench technology and G1 G2 design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S1 S2 Schematic diagram General Features VDS =-60V,ID =-5A RDS(ON)

 9.180. Size:800K  ncepower
 nce60n640.pdf

NCE60N640 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 580 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 6.7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and indust

 9.181. Size:807K  ncepower
 nce60nf055f.pdf

NCE60NF055F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 50 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 51 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 58 nC power conversion, and industria

 9.182. Size:407K  ncepower
 nce60p50k.pdf

Pb Free Product http //www.ncepower.com NCE60P50K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P50K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-50A RDS(ON)

 9.183. Size:416K  ncepower
 nce60nd09as.pdf

NCE60ND09AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

 9.184. Size:704K  ncepower
 nce60nf730f.pdf

NCE60NF730F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.4 nC power conversion, and indust

 9.185. Size:344K  ncepower
 nce60p04y.pdf

Pb Free Product http //www.ncepower.com NCE60P04Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4A RDS(ON)

 9.186. Size:353K  ncepower
 nce60p03y.pdf

NCE60P03Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P03Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. Schematic diagram General Features VDS =-60V,ID =-3A RDS(ON)

 9.187. Size:808K  ncepower
 nce60nf160t.pdf

NCE60NF160T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 9.188. Size:658K  ncepower
 nce60nd20ak.pdf

Pb Free Product http //www.ncepower.com NCE60ND20AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND20AK uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features V =60V,I =20A Schematic diagram DS D R

 9.189. Size:594K  ncepower
 nce6058ak.pdf

http //www.ncepower.com NCE6058AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6058AK uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =58A DS D R

 9.190. Size:711K  ncepower
 nce60p17aq.pdf

NCE60P17AQ http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET General Features Description V = -60V,I = -17A DS D The NCE60P17AQ uses advanced trench technology to provide R

 9.191. Size:650K  ncepower
 nce60n670k.pdf

NCE60N670K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 620 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.4 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 9.192. Size:333K  ncepower
 nce60p04r.pdf

Pb Free Product http //www.ncepower.com NCE60P04R NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P04R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-4.3A Schematic diagram RDS(ON)

 9.193. Size:624K  ncepower
 nce60p82ak.pdf

NCE60P82AK http //www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This DS(ON) device is well suited for high current load applications. General Features V =-60V,I =-82A DS D R

 9.194. Size:1526K  ncepower
 nce60td65bp.pdf

Pb Free Product NCE60TD65BP 650V, 60A, Trench FS II Fast IGBT General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features Trench FSII Technology offering Very low V CE(sat) High speed switching

 9.195. Size:930K  cn vbsemi
 nce603s.pdf

NCE603S www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS =

 9.196. Size:915K  cn vbsemi
 nce6005as.pdf

NCE6005AS www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channe

 9.197. Size:805K  cn vbsemi
 nce60p25k.pdf

NCE60P25K www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bri