NCE60H10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE60H10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 170 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 100 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 410 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0052 Ohm
   Paquete / Cubierta: TO-263

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NCE60H10D Datasheet (PDF)

..1. Size:607K ncepower
nce60h10d.pdf

http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR

6.1. Size:617K ncepower
nce60h10k.pdf

http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR

6.2. Size:617K ncepower
nce60h10.pdf

http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR

6.3. Size:388K ncepower
nce60h10f.pdf

Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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