NCE60H10D Todos los transistores

 

NCE60H10D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60H10D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de NCE60H10D MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCE60H10D Datasheet (PDF)

 ..1. Size:607K  ncepower
nce60h10d.pdf pdf_icon

NCE60H10D

http://www.ncepower.comNCE60H10DNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10D uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 6.1. Size:617K  ncepower
nce60h10k.pdf pdf_icon

NCE60H10D

http://www.ncepower.comNCE60H10KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10K uses advanced trench technology anddesign to provide excellent R with low gate charge. ThisDS(ON)device is suitable for use in PWM, load switching and generalpurpose applications.General Features V =60V,I =100A Schematic diagramDS DR

 6.2. Size:617K  ncepower
nce60h10.pdf pdf_icon

NCE60H10D

http://www.ncepower.comNCE60H10NCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60H10 uses advanced trench technology and designto provide excellent R with low gate charge. This device isDS(ON)suitable for use in PWM, load switching and general purposeapplications.Schematic diagramGeneral Features V =60V,I =100ADS DR

 6.3. Size:388K  ncepower
nce60h10f.pdf pdf_icon

NCE60H10D

Pb Free Producthttp://www.ncepower.com NCE60H10FNCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10F uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

Otros transistores... NCE6065G , NCE6080 , NCE6080AI , NCE6080AK , NCE6080AT , NCE6080ED , NCE6080EK , NCE60H10 , IRF1405 , NCE60H10K , NCE60H15AT , NCE60H15T , NCE60H18 , NCE60H28LL , NCE60H30T , NCE60N1K0D , NCE60N1K0F .

History: CMPDM202PH | IRFZ34L | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | SL3139K

 

 
Back to Top

 


 
.