NCE60N2K1F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60N2K1F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 8.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 17.3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de NCE60N2K1F MOSFET
NCE60N2K1F Datasheet (PDF)
nce60n2k1f.pdf
NCE60N2K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1r.pdf
NCE60N2K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1d.pdf
NCE60N2K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
nce60n2k1k.pdf
NCE60N2K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 1950 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 1.8 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 3.9 nCSMPS requirements for P
Otros transistores... NCE60H28LL , NCE60H30T , NCE60N1K0D , NCE60N1K0F , NCE60N1K0I , NCE60N1K0K , NCE60N1K0R , NCE60N2K1D , IRFP064N , NCE60N2K1I , NCE60N2K1K , NCE60N2K1R , NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F , NCE60N390I .
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