NCE60N390I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60N390I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 99 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 32 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de NCE60N390I MOSFET
NCE60N390I Datasheet (PDF)
nce60n390i.pdf

NCE60N390IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390f.pdf

NCE60N390FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390k.pdf

NCE60N390KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industria
nce60n390.pdf

NCE60N390N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 350 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 10 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 13 nCpower conversion, and industrial
Otros transistores... NCE60N2K1F , NCE60N2K1I , NCE60N2K1K , NCE60N2K1R , NCE60N370K , NCE60N390 , NCE60N390D , NCE60N390F , IRF540N , NCE60N390K , NCE60N640 , NCE60N640D , NCE60N640F , NCE60N640I , NCE60N640K , NCE60N670F , NCE60N670K .
History: IXFH17N80Q | IPD60R1K5CE | CHM4435AZGP | IXTT26N50P | CEF02N9 | NTMFS4C054N | PE6W8DX
History: IXFH17N80Q | IPD60R1K5CE | CHM4435AZGP | IXTT26N50P | CEF02N9 | NTMFS4C054N | PE6W8DX



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