FQA6N90CF109 Todos los transistores

 6.1. Size:797K  fairchild semi
 fqa6n90c f109.pdf

September 2007 QFET FQA6N90C_F109 900V N-Channel MOSFET Features Description 6A, 900V, RDS(on) = 2.3 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 11pF) This advanced technology has been especially tailored t

 6.2. Size:1730K  onsemi
 fqa6n90c-f109.pdf

FQA6N90C-F109 N-Channel QFET MOSFET Description 900 V, 6 A, 2.3 This N-Channel enhancement mode power MOSFET is Features produced using ON Semiconductor s proprietary planar 6 A, 900 V, RDS(on) = 2.3 (Max.) @ VGS = 10 V, ID = 3 A stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state Low Gate Charge (Typ. 3

 7.1. Size:726K  fairchild semi
 fqa6n90.pdf

April 2000 TM QFET QFET QFET QFET 900V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 6.4A, 900V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been es