NCE60N670K Todos los transistores

 

NCE60N670K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60N670K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 72 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.4 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.67 Ohm
   Paquete / Cubierta: TO-252
 
   - Selección ⓘ de transistores por parámetros

 

NCE60N670K Datasheet (PDF)

 ..1. Size:650K  ncepower
 nce60n670k.pdf pdf_icon

NCE60N670K

NCE60N670KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 5.1. Size:630K  ncepower
 nce60n670f.pdf pdf_icon

NCE60N670K

NCE60N670FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 620 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.4 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr

 7.1. Size:814K  ncepower
 nce60n640f.pdf pdf_icon

NCE60N670K

NCE60N640FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

 7.2. Size:793K  ncepower
 nce60n640k.pdf pdf_icon

NCE60N670K

NCE60N640KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 580 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 6.7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and indus

MOSTRAR MÁS

Otros transistores... NCE60N390I , NCE60N390K , NCE60N640 , NCE60N640D , NCE60N640F , NCE60N640I , NCE60N640K , NCE60N670F , IRF630 , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , NCE60N700R , NCE60ND03N , NCE60ND03S , NCE60ND08S .

History: NTS2101PT1G

 

 
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