NCE60N700D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60N700D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 68 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.1 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm

Encapsulados: TO263

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NCE60N700D datasheet

 ..1. Size:641K  ncepower
 nce60n700d.pdf pdf_icon

NCE60N700D

NCE60N700D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 5.1. Size:686K  ncepower
 nce60n700f.pdf pdf_icon

NCE60N700D

NCE60N700F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 5.2. Size:698K  ncepower
 nce60n700r.pdf pdf_icon

NCE60N700D

NCE60N700R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

 5.3. Size:667K  ncepower
 nce60n700i.pdf pdf_icon

NCE60N700D

NCE60N700I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 650 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6.1 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.6 nC power conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE60N390K, NCE60N640, NCE60N640D, NCE60N640F, NCE60N640I, NCE60N640K, NCE60N670F, NCE60N670K, IRFP260N, NCE60N700F, NCE60N700I, NCE60N700K, NCE60N700R, NCE60ND03N, NCE60ND03S, NCE60ND08S, NCE60ND45AG