NCE60N700F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60N700F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.1 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 21 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de NCE60N700F MOSFET
NCE60N700F Datasheet (PDF)
nce60n700f.pdf
NCE60N700FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr
nce60n700d.pdf
NCE60N700DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr
nce60n700r.pdf
NCE60N700RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr
nce60n700i.pdf
NCE60N700IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 650 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.6 nCpower conversion, and industr
Otros transistores... NCE60N640 , NCE60N640D , NCE60N640F , NCE60N640I , NCE60N640K , NCE60N670F , NCE60N670K , NCE60N700D , AO3400 , NCE60N700I , NCE60N700K , NCE60N700R , NCE60ND03N , NCE60ND03S , NCE60ND08S , NCE60ND45AG , NCE60ND45XG .
History: VS4618AS | NCE60N670K | PHT4NQ10LT | HY4N65T | GP1T072A060B
History: VS4618AS | NCE60N670K | PHT4NQ10LT | HY4N65T | GP1T072A060B
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