NCE60ND03N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60ND03N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 34 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0984 Ohm

Encapsulados: SOT-23-6L

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NCE60ND03N datasheet

 ..1. Size:643K  ncepower
 nce60nd03n.pdf pdf_icon

NCE60ND03N

http //www.ncepower.com NCE60ND03N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 5.1. Size:659K  ncepower
 nce60nd03s.pdf pdf_icon

NCE60ND03N

http //www.ncepower.com NCE60ND03S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 6.1. Size:405K  ncepower
 nce60nd08s.pdf pdf_icon

NCE60ND03N

http //www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS D R

 6.2. Size:416K  ncepower
 nce60nd09as.pdf pdf_icon

NCE60ND03N

NCE60ND09AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE60N640K, NCE60N670F, NCE60N670K, NCE60N700D, NCE60N700F, NCE60N700I, NCE60N700K, NCE60N700R, AON6414A, NCE60ND03S, NCE60ND08S, NCE60ND45AG, NCE60ND45XG, NCE60NF019T, NCE60NF031T, NCE60NF040T, NCE60NF055