NCE60ND03N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60ND03N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 34 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0984 Ohm
Paquete / Cubierta: SOT-23-6L
Búsqueda de reemplazo de NCE60ND03N MOSFET
NCE60ND03N Datasheet (PDF)
nce60nd03n.pdf

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR
nce60nd03s.pdf

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR
nce60nd08s.pdf

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR
nce60nd09as.pdf

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)
Otros transistores... NCE60N640K , NCE60N670F , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , NCE60N700R , IRFB4110 , NCE60ND03S , NCE60ND08S , NCE60ND45AG , NCE60ND45XG , NCE60NF019T , NCE60NF031T , NCE60NF040T , NCE60NF055 .
History: STV160NF02LAT4 | CJA03N10S | NCE60N390F | AP15P10GS | HMS15N65D
History: STV160NF02LAT4 | CJA03N10S | NCE60N390F | AP15P10GS | HMS15N65D



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