NCE60ND03S Todos los transistores

 

NCE60ND03S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60ND03S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 14.6 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 34 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.096 Ohm
   Paquete / Cubierta: SOP8
 

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NCE60ND03S Datasheet (PDF)

 ..1. Size:659K  ncepower
 nce60nd03s.pdf pdf_icon

NCE60ND03S

http://www.ncepower.comNCE60ND03SNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03S uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 5.1. Size:643K  ncepower
 nce60nd03n.pdf pdf_icon

NCE60ND03S

http://www.ncepower.comNCE60ND03NNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE60ND03N uses advanced trench technology toprovide excellent R , low gate charge and operation withDS(ON)gate voltages as low as 2.5V. This device is suitable for use asSchematic diagrama Battery protection or in other switching application.General Features V =60V,I =3ADS DR

 6.1. Size:405K  ncepower
 nce60nd08s.pdf pdf_icon

NCE60ND03S

http://www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS DR

 6.2. Size:416K  ncepower
 nce60nd09as.pdf pdf_icon

NCE60ND03S

NCE60ND09AShttp://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE60N670F , NCE60N670K , NCE60N700D , NCE60N700F , NCE60N700I , NCE60N700K , NCE60N700R , NCE60ND03N , IRFP250N , NCE60ND08S , NCE60ND45AG , NCE60ND45XG , NCE60NF019T , NCE60NF031T , NCE60NF040T , NCE60NF055 , NCE60NF055D .

History: SPB16N50C3 | 2P7154VC

 

 
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