NCE60NF040T Todos los transistores

 

NCE60NF040T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE60NF040T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 411 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 61 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 242 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-247
 

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NCE60NF040T Datasheet (PDF)

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NCE60NF040T

NCE60NF040TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 35 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 61 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 87 nCSMPS requirements for PFC,

 6.1. Size:789K  ncepower
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NCE60NF040T

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

 6.2. Size:763K  ncepower
nce60nf080.pdf pdf_icon

NCE60NF040T

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

 6.3. Size:887K  ncepower
nce60nf080t.pdf pdf_icon

NCE60NF040T

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

Otros transistores... NCE60N700R , NCE60ND03N , NCE60ND03S , NCE60ND08S , NCE60ND45AG , NCE60ND45XG , NCE60NF019T , NCE60NF031T , 7N65 , NCE60NF055 , NCE60NF055D , NCE60NF055F , NCE60NF055T , NCE60NF080 , NCE60NF080D , NCE60NF080F , NCE60NF080T .

History: SST202 | NCE85H21TC | STD5NK50Z | UT8205AL-S08-R

 

 
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