NCE60NF040T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE60NF040T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 411 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 61 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 242 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET NCE60NF040T

NCE60NF040T Datasheet (PDF)

..1. Size:929K ncepower
nce60nf040t.pdf

NCE60NF040TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 35 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 61 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 87 nCSMPS requirements for PFC,

6.1. Size:789K ncepower
nce60nf080f.pdf

NCE60NF080FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

6.2. Size:763K ncepower
nce60nf080.pdf

NCE60NF080N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industrial

6.3. Size:887K ncepower
nce60nf080t.pdf

NCE60NF080TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

6.4. Size:900K ncepower
nce60nf031t.pdf

NCE60NF031TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDSmin@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 23 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 81 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 135 nCSMPS requirements for P

6.5. Size:891K ncepower
nce60nf019t.pdf

NCE60NF019TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 17 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 107 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 184 nCSMPS requirements for PF

6.6. Size:747K ncepower
nce60nf055.pdf

NCE60NF055N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industrial

6.7. Size:749K ncepower
nce60nf080d.pdf

NCE60NF080DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 70 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 41 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 53 nCpower conversion, and industria

6.8. Size:872K ncepower
nce60nf055t.pdf

NCE60NF055TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

6.9. Size:728K ncepower
nce60nf055d.pdf

NCE60NF055DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

6.10. Size:807K ncepower
nce60nf055f.pdf

NCE60NF055FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 50 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 51 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 58 nCpower conversion, and industria

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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