NCE60NF160T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE60NF160T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 194 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 21 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO-247

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NCE60NF160T datasheet

 ..1. Size:808K  ncepower
 nce60nf160t.pdf pdf_icon

NCE60NF160T

NCE60NF160T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 4.1. Size:703K  ncepower
 nce60nf160v.pdf pdf_icon

NCE60NF160T

NCE60NF160V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 4.2. Size:658K  ncepower
 nce60nf160k.pdf pdf_icon

NCE60NF160T

NCE60NF160K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 145 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 21 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 23 nC power conversion, and industri

 6.1. Size:568K  ncepower
 nce60nf110.pdf pdf_icon

NCE60NF160T

NCE60NF110 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 95 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 29 A diode.This super junction MOSFET fits the industry s AC-DC Qg 41 nC SMPS requirements for PFC, AC/

MOSTRAR MÁS

Otros transistores... NCE60NF055T, NCE60NF080, NCE60NF080D, NCE60NF080F, NCE60NF080T, NCE60NF110, NCE60NF110F, NCE60NF160K, 4435, NCE60NF160V, NCE60NF200, NCE60NF200D, NCE60NF200F, NCE60NF200I, NCE60NF200K, NCE60NF260, NCE60NF260D