NCE60NF260K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60NF260K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 128 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 19 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de NCE60NF260K MOSFET
NCE60NF260K Datasheet (PDF)
nce60nf260k.pdf

NCE60NF260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus
nce60nf260d.pdf

NCE60NF260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus
nce60nf260f.pdf

NCE60NF260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus
nce60nf260i.pdf

NCE60NF260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 14 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indus
Otros transistores... NCE60NF200D , NCE60NF200F , NCE60NF200I , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F , NCE60NF260I , AO4407 , NCE60NF730D , NCE60NF730F , NCE60NF730I , NCE60NF730K , NCE60NF730R , NCE60NP09S , NCE60NP1515K , NCE60NP2012K .
History: IPB015N08N5
History: IPB015N08N5



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