NCE60NF730D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60NF730D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.1 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 23 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.73 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de NCE60NF730D MOSFET
NCE60NF730D Datasheet (PDF)
nce60nf730d.pdf

NCE60NF730DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730i.pdf

NCE60NF730IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730k.pdf

NCE60NF730KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730r.pdf

NCE60NF730RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
Otros transistores... NCE60NF200F , NCE60NF200I , NCE60NF200K , NCE60NF260 , NCE60NF260D , NCE60NF260F , NCE60NF260I , NCE60NF260K , IRLB4132 , NCE60NF730F , NCE60NF730I , NCE60NF730K , NCE60NF730R , NCE60NP09S , NCE60NP1515K , NCE60NP2012K , NCE60NP2016G .
History: BSL207SP | LSB55R050GT | S85N042RP | HM10P10D | FDU6688 | UPA1950
History: BSL207SP | LSB55R050GT | S85N042RP | HM10P10D | FDU6688 | UPA1950



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