NCE60NF730F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE60NF730F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 31.2 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6.1 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 9.4 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 23 pF
Resistencia entre drenaje y fuente RDS(on): 0.73 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET NCE60NF730F
NCE60NF730F Datasheet (PDF)
nce60nf730f.pdf
NCE60NF730FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730i.pdf
NCE60NF730IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730k.pdf
NCE60NF730KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730r.pdf
NCE60NF730RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
nce60nf730d.pdf
NCE60NF730DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 650 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6.1 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.4 nCpower conversion, and indust
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
