FQA90N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

January 2001TMQFETQFETQFETQFETFQA90N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 90A, 80V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 200 pF)This advanced technology has been

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FQA90N08FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

October 2005QFETFQA90N10V2100V N-Channel MOSFETFeatures Description 105A, 100V, RDS(on) = 10m @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 147 nC)DMOS technology. Low Crss ( typical 300 pF)This advanced technology has been especially tailore

October 2006 QFETFQH90N15 / FQA90N15 N-Channel Power MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge (typical 220 nC)stripe, DMOS technology. Low Crss (typical 200 pF)This advanced technology has been especiall

November 2007 QFETFQA90N15_F109150V N-Channel MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 200pF)This advanced technology has been especially tailore

FQA90N15-F109 N-Channel QFET MOSFETDescription150 V, 90 A, 18 mThese N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 AThis advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC)minimize on-

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur