FQA90N08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQA90N08
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 214 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: TO3PN

Búsqueda de reemplazo de MOSFET FQA90N08

FQA90N08 Datasheet (PDF)

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fqa90n08.pdf

January 2001TMQFETQFETQFETQFETFQA90N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 90A, 80V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 84 nC)planar stripe, DMOS technology. Low Crss ( typical 200 pF)This advanced technology has been

..2. Size:2444K onsemi
fqa90n08.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqa90n08.pdf

isc N-Channel MOSFET Transistor FQA90N08FEATURESDrain Current : I = 90A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABS

8.1. Size:1007K fairchild semi
fqa90n10v2.pdf

October 2005QFETFQA90N10V2100V N-Channel MOSFETFeatures Description 105A, 100V, RDS(on) = 10m @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( typical 147 nC)DMOS technology. Low Crss ( typical 300 pF)This advanced technology has been especially tailore

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fqa90n15 fqh90n15.pdf

October 2006 QFETFQH90N15 / FQA90N15 N-Channel Power MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge (typical 220 nC)stripe, DMOS technology. Low Crss (typical 200 pF)This advanced technology has been especiall

8.3. Size:784K fairchild semi
fqa90n15 f109.pdf

November 2007 QFETFQA90N15_F109150V N-Channel MOSFETFeatures Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 200pF)This advanced technology has been especially tailore

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FQA90N15-F109 N-Channel QFET MOSFETDescription150 V, 90 A, 18 mThese N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductors proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 AThis advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC)minimize on-

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Otros transistores... FQA6N90CF109 , FQA70N10 , SDF04N65 , FQA70N15 , FQA7N80CF109 , SDF04N60 , FQA8N100C , FQA8N90CF109 , AO3401 , FQA90N15 , FQA90N15F109 , FQA9N90F109 , FQA9N90CF109 , FQA9P25 , FQAF11N90C , FQAF13N80 , SDD06N70 .

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