FQA90N15 Todos los transistores

 ..1. Size:1091K  fairchild semi
 fqa90n15 fqh90n15.pdf

October 2006 QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge (typical 220 nC) stripe, DMOS technology. Low Crss (typical 200 pF) This advanced technology has been especiall

 ..2. Size:784K  fairchild semi
 fqa90n15 f109.pdf

November 2007 QFET FQA90N15_F109 150V N-Channel MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 200pF) This advanced technology has been especially tailore

 ..3. Size:2170K  onsemi
 fqa90n15.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:1004K  onsemi
 fqa90n15-f109.pdf

FQA90N15-F109 N-Channel QFET MOSFET Description 150 V, 90 A, 18 m These N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 A This advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC) minimize on-

 7.1. Size:1007K  fairchild semi
 fqa90n10v2.pdf

October 2005 QFET FQA90N10V2 100V N-Channel MOSFET Features Description 105A, 100V, RDS(on) = 10m @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 147 nC) DMOS technology. Low Crss ( typical 300 pF) This advanced technology has been especially tailore

 8.1. Size:713K  fairchild semi
 fqa90n08.pdf

January 2001 TM QFET QFET QFET QFET FQA90N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 90A, 80V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 84 nC) planar stripe, DMOS technology. Low Crss ( typical 200 pF) This advanced technology has been

 8.2. Size:2444K  onsemi
 fqa90n08.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.3. Size:260K  inchange semiconductor
 fqa90n08.pdf

isc N-Channel MOSFET Transistor FQA90N08 FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS