NCE65N230 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N230

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 172 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm

Encapsulados: TO220

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NCE65N230 datasheet

 ..1. Size:744K  ncepower
 nce65n230.pdf pdf_icon

NCE65N230

NCE65N230 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and industr

 0.1. Size:726K  ncepower
 nce65n230k.pdf pdf_icon

NCE65N230

NCE65N230K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

 0.2. Size:752K  ncepower
 nce65n230f.pdf pdf_icon

NCE65N230

NCE65N230F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

 0.3. Size:751K  ncepower
 nce65n230i.pdf pdf_icon

NCE65N230

NCE65N230I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 190 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 17 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19 nC power conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE65N180K, NCE65N180T, NCE65N180V, NCE65N1K2D, NCE65N1K2F, NCE65N1K2I, NCE65N1K2K, NCE65N1K2R, IRF740, NCE65N230D, NCE65N230F, NCE65N230I, NCE65N230K, NCE65N260, NCE65N260D, NCE65N260F, NCE65N260I