NCE65N230K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N230K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 172 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 19 nC
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de NCE65N230K MOSFET
NCE65N230K Datasheet (PDF)
nce65n230k.pdf

NCE65N230KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indust
nce65n230f.pdf

NCE65N230FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indust
nce65n230i.pdf

NCE65N230IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indust
nce65n230d.pdf

NCE65N230DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 190 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 17 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19 nCpower conversion, and indust
Otros transistores... NCE65N1K2F , NCE65N1K2I , NCE65N1K2K , NCE65N1K2R , NCE65N230 , NCE65N230D , NCE65N230F , NCE65N230I , IRF540N , NCE65N260 , NCE65N260D , NCE65N260F , NCE65N260I , NCE65N260K , NCE65N290 , NCE65N290D , NCE65N290F .



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