FQA90N15F109 Todos los transistores

 6.1. Size:1091K  fairchild semi
 fqa90n15 fqh90n15.pdf

October 2006 QFET FQH90N15 / FQA90N15 N-Channel Power MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge (typical 220 nC) stripe, DMOS technology. Low Crss (typical 200 pF) This advanced technology has been especiall

 6.2. Size:784K  fairchild semi
 fqa90n15 f109.pdf

November 2007 QFET FQA90N15_F109 150V N-Channel MOSFET Features Description 90A, 150V, RDS(on) = 0.018 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 220nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 200pF) This advanced technology has been especially tailore

 6.3. Size:1004K  onsemi
 fqa90n15-f109.pdf

FQA90N15-F109 N-Channel QFET MOSFET Description 150 V, 90 A, 18 m These N-Channel enhancement mode power field Features effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology. RDS(on) = 18 m (Max.) @ VGS = 10 V, ID = 45 A This advanced technology has been especially tailored to Low Gate Charge (Typ. 220 nC) minimize on-

 6.4. Size:2170K  onsemi
 fqa90n15.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur