NCE65N290 Todos los transistores

 

NCE65N290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N290
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 127 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-220
 

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NCE65N290 Datasheet (PDF)

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NCE65N290

NCE65N290N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 15 nCpower conversion, and industr

 0.1. Size:717K  ncepower
 nce65n290k.pdf pdf_icon

NCE65N290

NCE65N290KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 15 nCpower conversion, and indust

 0.2. Size:731K  ncepower
 nce65n290i.pdf pdf_icon

NCE65N290

NCE65N290IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 15 nCpower conversion, and indust

 0.3. Size:711K  ncepower
 nce65n290d.pdf pdf_icon

NCE65N290

NCE65N290DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 15 nCpower conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE65N230F , NCE65N230I , NCE65N230K , NCE65N260 , NCE65N260D , NCE65N260F , NCE65N260I , NCE65N260K , IRFP260N , NCE65N290D , NCE65N290F , NCE65N290I , NCE65N290K , NCE65N330 , NCE65N330D , NCE65N330F , NCE65N330I .

History: AP80N03GP | CSD18503KCS | APT8024B2LLG | OSG60R190DTF | 2SK1447LS | DMTH6016LSD

 

 
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