NCE65N330D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE65N330D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: TO-263

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NCE65N330D Datasheet (PDF)

..1. Size:738K ncepower
nce65n330d.pdf

NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

5.1. Size:754K ncepower
nce65n330.pdf

NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial

5.2. Size:759K ncepower
nce65n330i.pdf

NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

5.3. Size:752K ncepower
nce65n330r.pdf

NCE65N330RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

5.4. Size:780K ncepower
nce65n330f.pdf

NCE65N330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

5.5. Size:743K ncepower
nce65n330k.pdf

NCE65N330KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

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