NCE65N330D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N330D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 31 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm

Encapsulados: TO-263

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NCE65N330D datasheet

 ..1. Size:738K  ncepower
 nce65n330d.pdf pdf_icon

NCE65N330D

NCE65N330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria

 5.1. Size:754K  ncepower
 nce65n330.pdf pdf_icon

NCE65N330D

NCE65N330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industrial

 5.2. Size:759K  ncepower
 nce65n330i.pdf pdf_icon

NCE65N330D

NCE65N330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria

 5.3. Size:752K  ncepower
 nce65n330r.pdf pdf_icon

NCE65N330D

NCE65N330R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE65N260I, NCE65N260K, NCE65N290, NCE65N290D, NCE65N290F, NCE65N290I, NCE65N290K, NCE65N330, IRF3710, NCE65N330F, NCE65N330I, NCE65N330K, NCE65N330R, NCE65N460, NCE65N460D, NCE65N460F, NCE65N460I