NCE65N330F Todos los transistores

 

NCE65N330F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N330F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: TO-220F
 

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NCE65N330F Datasheet (PDF)

 ..1. Size:780K  ncepower
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NCE65N330F

NCE65N330FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 5.1. Size:754K  ncepower
 nce65n330.pdf pdf_icon

NCE65N330F

NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial

 5.2. Size:738K  ncepower
 nce65n330d.pdf pdf_icon

NCE65N330F

NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 5.3. Size:759K  ncepower
 nce65n330i.pdf pdf_icon

NCE65N330F

NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE65N260K , NCE65N290 , NCE65N290D , NCE65N290F , NCE65N290I , NCE65N290K , NCE65N330 , NCE65N330D , IRFB4227 , NCE65N330I , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K .

History: HTD1K5N10 | QM3014M6

 

 
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