NCE65N760D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N760D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 73 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 7.2 nC
Tiempo de subida (tr): 7 nS
Conductancia de drenaje-sustrato (Cd): 14 pF
Resistencia entre drenaje y fuente RDS(on): 0.79 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET NCE65N760D
NCE65N760D Datasheet (PDF)
nce65n760d.pdf
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NCE65N760DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
nce65n760k.pdf
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NCE65N760KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
nce65n760.pdf
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NCE65N760N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industrial
nce65n760i.pdf
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NCE65N760IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
nce65n760f.pdf
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NCE65N760FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .