NCE65N800F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N800F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 18 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: TO220F

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NCE65N800F datasheet

 ..1. Size:798K  ncepower
 nce65n800f.pdf pdf_icon

NCE65N800F

NCE65N800F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800F

NCE65N800D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

 5.2. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800F

NCE65N800K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

 5.3. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800F

NCE65N800R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 700 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 8.7 nC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F, NCE65N760I, NCE65N760K, NCE65N800D, 4435, NCE65N800I, NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D, NCE65N900F, NCE65N900I, NCE65N900K