NCE65N900K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N900K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 59 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.1 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 12 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO252

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NCE65N900K datasheet

 ..1. Size:795K  ncepower
 nce65n900k.pdf pdf_icon

NCE65N900K

NCE65N900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

 5.1. Size:788K  ncepower
 nce65n900i.pdf pdf_icon

NCE65N900K

NCE65N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

 5.2. Size:834K  ncepower
 nce65n900r.pdf pdf_icon

NCE65N900K

NCE65N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

 5.3. Size:788K  ncepower
 nce65n900d.pdf pdf_icon

NCE65N900K

NCE65N900D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE65N800F, NCE65N800I, NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D, NCE65N900F, NCE65N900I, IRF1010E, NCE65N900R, NCE65NF023T, NCE65NF023T4, NCE65NF036T, NCE65NF036T4, NCE65NF050T, NCE65NF068, NCE65NF068D