NCE65NF068V MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE65NF068V
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 371 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 132 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
   Paquete / Cubierta: DFN8X8

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NCE65NF068V Datasheet (PDF)

..1. Size:726K ncepower
nce65nf068v.pdf

NCE65NF068VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

4.1. Size:728K ncepower
nce65nf068ll.pdf

NCE65NF068LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industri

4.2. Size:726K ncepower
nce65nf068t.pdf

NCE65NF068TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

4.3. Size:775K ncepower
nce65nf068d.pdf

NCE65NF068DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

4.4. Size:738K ncepower
nce65nf068.pdf

NCE65NF068N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industrial

4.5. Size:709K ncepower
nce65nf068f.pdf

NCE65NF068FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CS2N60U

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