NCE65NF099 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE65NF099
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 346 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 96 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
   Paquete / Cubierta: TO-220

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NCE65NF099 Datasheet (PDF)

..1. Size:728K ncepower
nce65nf099.pdf

NCE65NF099N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC/

0.1. Size:856K ncepower
nce65nf099t.pdf

NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

0.2. Size:726K ncepower
nce65nf099ll.pdf

NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A

0.3. Size:709K ncepower
nce65nf099d.pdf

NCE65NF099DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

0.4. Size:709K ncepower
nce65nf099v.pdf

NCE65NF099VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

0.5. Size:727K ncepower
nce65nf099f.pdf

NCE65NF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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