NCE65NF099 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65NF099

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 346 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 96 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm

Encapsulados: TO-220

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NCE65NF099 datasheet

 ..1. Size:728K  ncepower
 nce65nf099.pdf pdf_icon

NCE65NF099

NCE65NF099 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC/

 0.1. Size:856K  ncepower
 nce65nf099t.pdf pdf_icon

NCE65NF099

NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

 0.2. Size:726K  ncepower
 nce65nf099ll.pdf pdf_icon

NCE65NF099

NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A

 0.3. Size:709K  ncepower
 nce65nf099d.pdf pdf_icon

NCE65NF099

NCE65NF099D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC

MOSTRAR MÁS

Otros transistores... NCE65NF036T4, NCE65NF050T, NCE65NF068, NCE65NF068D, NCE65NF068F, NCE65NF068LL, NCE65NF068T, NCE65NF068V, IRFP250, NCE65NF099D, NCE65NF099F, NCE65NF099LL, NCE65NF099T, NCE65NF099V, NCE65NF190, NCE65NF190D, NCE65NF190F