NCE65NF190D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65NF190D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 194 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 60 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO-263

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NCE65NF190D datasheet

 ..1. Size:741K  ncepower
 nce65nf190d.pdf pdf_icon

NCE65NF190D

NCE65NF190D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

 4.1. Size:717K  ncepower
 nce65nf190ll.pdf pdf_icon

NCE65NF190D

NCE65NF190LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industr

 4.2. Size:711K  ncepower
 nce65nf190k.pdf pdf_icon

NCE65NF190D

NCE65NF190K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

 4.3. Size:725K  ncepower
 nce65nf190f.pdf pdf_icon

NCE65NF190D

NCE65NF190F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 165 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 18 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 30 nC power conversion, and industri

MOSTRAR MÁS

Otros transistores... NCE65NF068V, NCE65NF099, NCE65NF099D, NCE65NF099F, NCE65NF099LL, NCE65NF099T, NCE65NF099V, NCE65NF190, AO3407, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T, NCE65T180V, NCE65T1K9I