NCE65NF190T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65NF190T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 194 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO-247
Búsqueda de reemplazo de NCE65NF190T MOSFET
NCE65NF190T Datasheet (PDF)
nce65nf190t.pdf

NCE65NF190TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri
nce65nf190ll.pdf

NCE65NF190LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industr
nce65nf190k.pdf

NCE65NF190KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri
nce65nf190f.pdf

NCE65NF190FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri
Otros transistores... NCE65NF099LL , NCE65NF099T , NCE65NF099V , NCE65NF190 , NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCEP15T14 , NCE65NF190V , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D .
History: NCEP040N10GU | IXTQ40N50L2 | IXTQ32P20T | HUF75329D3ST | BL20N65-W | HUF75337S3 | FDS3680
History: NCEP040N10GU | IXTQ40N50L2 | IXTQ32P20T | HUF75329D3ST | BL20N65-W | HUF75337S3 | FDS3680



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