NCE65T130T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T130T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 260 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.139 Ohm

Encapsulados: TO-247

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NCE65T130T datasheet

 ..1. Size:469K  ncepower
 nce65t130t.pdf pdf_icon

NCE65T130T

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 5.1. Size:616K  ncepower
 nce65t130d nce65t130 nce65t130f.pdf pdf_icon

NCE65T130T

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:616K  ncepower
 nce65t130.pdf pdf_icon

NCE65T130T

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.3. Size:616K  ncepower
 nce65t130f.pdf pdf_icon

NCE65T130T

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

MOSTRAR MÁS

Otros transistores... NCE65NF099V, NCE65NF190, NCE65NF190D, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, IRFZ24N, NCE65T180V, NCE65T1K9I, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, NCE70H10F, NCE70N100I