FQAF16N50 Todos los transistores

 

FQAF16N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQAF16N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 110 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 60 nC

Resistencia drenaje-fuente RDS(on): 0.32 Ohm

Empaquetado / Estuche: TO247_TO3P_TO3PF

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FQAF16N50 Datasheet (PDF)

1.1. fqaf16n50.pdf Size:719K _fairchild_semi

FQAF16N50
FQAF16N50

April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 11.3A, 500V, RDS(on) = 0.32? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 60 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially

3.1. fqaf16n25.pdf Size:710K _fairchild_semi

FQAF16N50
FQAF16N50

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 12.4A, 250V, RDS(on) = 0.23Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 27 nC) planar stripe, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been

3.2. fqaf16n25c.pdf Size:854K _fairchild_semi

FQAF16N50
FQAF16N50

® QFET FQAF16N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 11.4A, 250V, RDS(on) = 0.27Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar stripe, DMOS technology. • Low Crss ( typical 68 pF) This advanced technology has been especially tailored to •

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