NCE70N1K1F Todos los transistores

 

NCE70N1K1F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE70N1K1F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm
   Paquete / Cubierta: TO220F
 

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NCE70N1K1F Datasheet (PDF)

 ..1. Size:804K  ncepower
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NCE70N1K1F

NCE70N1K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 5.1. Size:791K  ncepower
 nce70n1k1k.pdf pdf_icon

NCE70N1K1F

NCE70N1K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 5.2. Size:811K  ncepower
 nce70n1k1i.pdf pdf_icon

NCE70N1K1F

NCE70N1K1IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 5.3. Size:873K  ncepower
 nce70n1k1r.pdf pdf_icon

NCE70N1K1F

NCE70N1K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

MOSTRAR MÁS

Otros transistores... NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D , NCE70H10F , NCE70N100I , NCE70N1K1D , RU7088R , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R , NCE70N1K4F , NCE70N1K4I , NCE70N1K4K , NCE70N1K4R , NCE70N290 .

History: NCE65T1K2F | AP4501AGEM-HF | GP2M007A065XG | AP6N1R7CDT | SPI21N50C3 | CJB04N60A | VP3203N3

 

 
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