NCE70N1K1F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70N1K1F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.1 Ohm

Encapsulados: TO220F

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NCE70N1K1F datasheet

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NCE70N1K1F

NCE70N1K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 5.1. Size:791K  ncepower
 nce70n1k1k.pdf pdf_icon

NCE70N1K1F

NCE70N1K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 5.2. Size:811K  ncepower
 nce70n1k1i.pdf pdf_icon

NCE70N1K1F

NCE70N1K1I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

 5.3. Size:873K  ncepower
 nce70n1k1r.pdf pdf_icon

NCE70N1K1F

NCE70N1K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind

MOSTRAR MÁS

Otros transistores... NCE65T1K9I, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, NCE70H10F, NCE70N100I, NCE70N1K1D, IRFZ48N, NCE70N1K1I, NCE70N1K1K, NCE70N1K1R, NCE70N1K4F, NCE70N1K4I, NCE70N1K4K, NCE70N1K4R, NCE70N290