NCE70N290D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70N290D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 124 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.295 Ohm

Encapsulados: TO-263

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NCE70N290D datasheet

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NCE70N290D

NCE70N290D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu

 5.1. Size:814K  ncepower
 nce70n290.pdf pdf_icon

NCE70N290D

NCE70N290 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indus

 5.2. Size:804K  ncepower
 nce70n290i.pdf pdf_icon

NCE70N290D

NCE70N290I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu

 5.3. Size:783K  ncepower
 nce70n290f.pdf pdf_icon

NCE70N290D

NCE70N290F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE70N1K1I, NCE70N1K1K, NCE70N1K1R, NCE70N1K4F, NCE70N1K4I, NCE70N1K4K, NCE70N1K4R, NCE70N290, RU7088R, NCE70N290F, NCE70N290I, NCE70N290K, NCE70N380, NCE70N380D, NCE70N380F, NCE70N380I, NCE70N380K