NCE70N600 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70N600
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 93 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 6 nS
Cossⓘ - Capacitancia de salida: 21 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.61 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de NCE70N600 MOSFET
- Selecciónⓘ de transistores por parámetros
NCE70N600 datasheet
..1. Size:783K ncepower
nce70n600.pdf 
NCE70N600 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and industr
0.1. Size:789K ncepower
nce70n600k.pdf
NCE70N600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and indust
0.2. Size:760K ncepower
nce70n600f.pdf
NCE70N600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and indust
8.1. Size:809K ncepower
nce70n380k.pdf
NCE70N380K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.2. Size:794K ncepower
nce70n1k4k.pdf
NCE70N1K4K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
8.3. Size:791K ncepower
nce70n1k1k.pdf
NCE70N1K1K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.4. Size:814K ncepower
nce70n290.pdf
NCE70N290 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indus
8.5. Size:813K ncepower
nce70n900f.pdf
NCE70N900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust
8.6. Size:842K ncepower
nce70n900r.pdf
NCE70N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust
8.7. Size:817K ncepower
nce70n380.pdf
NCE70N380 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and ind
8.8. Size:941K ncepower
nce70n380t.pdf
NCE70N380T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.9. Size:826K ncepower
nce70n900i.pdf
NCE70N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and industr
8.10. Size:870K ncepower
nce70n1k4r.pdf
NCE70N1K4R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
8.11. Size:804K ncepower
nce70n1k1f.pdf
NCE70N1K1F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.12. Size:800K ncepower
nce70n290d.pdf
NCE70N290D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.13. Size:800K ncepower
nce70n900k.pdf
NCE70N900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust
8.14. Size:811K ncepower
nce70n1k1i.pdf
NCE70N1K1I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.15. Size:814K ncepower
nce70n1k4i.pdf
NCE70N1K4I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
8.16. Size:804K ncepower
nce70n290i.pdf
NCE70N290I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.17. Size:783K ncepower
nce70n290f.pdf
NCE70N290F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.18. Size:938K ncepower
nce70n290t.pdf
NCE70N290T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.19. Size:873K ncepower
nce70n1k1r.pdf
NCE70N1K1R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.20. Size:863K ncepower
nce70n380r.pdf
NCE70N380R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.21. Size:825K ncepower
nce70n380i.pdf
NCE70N380I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.22. Size:798K ncepower
nce70n900.pdf
NCE70N900 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and industri
8.23. Size:781K ncepower
nce70n380f.pdf
NCE70N380F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.24. Size:390K ncepower
nce70n100i.pdf
Pb Free Product http //www.ncepower.com NCE70N100I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features S VDS = 100V,ID =57A RDS(ON)
8.25. Size:786K ncepower
nce70n1k1d.pdf
NCE70N1K1D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1000 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 4.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.5 nC power conversion, and ind
8.26. Size:804K ncepower
nce70n380d.pdf
NCE70N380D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in
8.27. Size:806K ncepower
nce70n290k.pdf
NCE70N290K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 16.5 nC power conversion, and indu
8.28. Size:803K ncepower
nce70n1k4f.pdf
NCE70N1K4F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1200 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 5 nC power conversion, and indus
Otros transistores... NCE70N290I, NCE70N290K, NCE70N380, NCE70N380D, NCE70N380F, NCE70N380I, NCE70N380K, NCE70N380R, IRF740, NCE70N600F, NCE70N600K, NCE70N900, NCE70N900F, NCE70N900I, NCE70N900K, NCE70N900R, NCE70T1K2F
