NCE70N900 Todos los transistores

 

NCE70N900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE70N900
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO220
 

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NCE70N900 Datasheet (PDF)

 ..1. Size:798K  ncepower
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NCE70N900

NCE70N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industri

 0.1. Size:813K  ncepower
 nce70n900f.pdf pdf_icon

NCE70N900

NCE70N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 0.2. Size:842K  ncepower
 nce70n900r.pdf pdf_icon

NCE70N900

NCE70N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 0.3. Size:826K  ncepower
 nce70n900i.pdf pdf_icon

NCE70N900

NCE70N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE70N380D , NCE70N380F , NCE70N380I , NCE70N380K , NCE70N380R , NCE70N600 , NCE70N600F , NCE70N600K , IRF540 , NCE70N900F , NCE70N900I , NCE70N900K , NCE70N900R , NCE70T1K2F , NCE70T260I , NCE70T260K , NCE70T260T .

History: BSC034N03LSG | HM2N10MR | IPD50P04P4-13 | FQB13N50CTM | SUP75P05-08 | IPB80N06S2L-09 | NCE65N520

 

 
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