NCE70T540D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70T540D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 69 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO-263

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NCE70T540D datasheet

 ..1. Size:603K  ncepower
 nce70t540d.pdf pdf_icon

NCE70T540D

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 ..2. Size:603K  ncepower
 nce70t540f nce70t540 nce70t540d.pdf pdf_icon

NCE70T540D

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:603K  ncepower
 nce70t540f.pdf pdf_icon

NCE70T540D

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.2. Size:489K  ncepower
 nce70t540k.pdf pdf_icon

NCE70T540D

NCE70T540I NCE70T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

MOSTRAR MÁS

Otros transistores... NCE70N900I, NCE70N900K, NCE70N900R, NCE70T1K2F, NCE70T260I, NCE70T260K, NCE70T260T, NCE70T540, IRFP260N, NCE70T540F, NCE70T680I, NCE70T680K, NCE70T900R, NCE72R60D, NCE75H21, NCE75H21D, NCE75H21T