NCE75H21 Todos los transistores

 

NCE75H21 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE75H21
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 310 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 210 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 914 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO-220
 

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NCE75H21 Datasheet (PDF)

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NCE75H21

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 0.1. Size:361K  ncepower
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NCE75H21

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 0.2. Size:293K  ncepower
 nce75h21d.pdf pdf_icon

NCE75H21

http://www.ncepower.com NCE75H21DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

 7.1. Size:688K  ncepower
 nce75h25t.pdf pdf_icon

NCE75H21

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

MOSTRAR MÁS

Otros transistores... NCE70T260T , NCE70T540 , NCE70T540D , NCE70T540F , NCE70T680I , NCE70T680K , NCE70T900R , NCE72R60D , IRFP250N , NCE75H21D , NCE75H21T , NCE75H25 , NCE75H25T , NCE75H35TC , NCE8290 , NCE8290B , NCE8295AG .

History: 2SK2385 | IPD530N15N3G

 

 
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