NCE75H25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE75H25T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 350 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 250 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
   Carga de la puerta (Qg): 311 nC
   Tiempo de subida (tr): 69 nS
   Conductancia de drenaje-sustrato (Cd): 932 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0042 Ohm
   Paquete / Cubierta: TO-247

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NCE75H25T Datasheet (PDF)

..1. Size:688K ncepower
nce75h25t.pdf

http://www.ncepower.comNCE75H25TNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE75H25T uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

6.1. Size:650K ncepower
nce75h25.pdf

http://www.ncepower.comNCE75H25NCE N-Channel Enhancement Mode Power MOSFET (Primary)DescriptionThe NCE75H25 uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V = 75V,I =250ADS DR

7.1. Size:361K ncepower
nce75h21t.pdf

Pb Free Producthttp://www.ncepower.com NCE75H21TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

7.2. Size:393K ncepower
nce75h21.pdf

http://www.ncepower.com NCE75H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

7.3. Size:293K ncepower
nce75h21d.pdf

http://www.ncepower.com NCE75H21DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE75H21D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in Automotive applications and a wide variety of other applications. General Features VDSS =75V,ID =210A Schematic diagram RDS(ON)

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