NCE8290B Todos los transistores

 

NCE8290B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE8290B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 170 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 82 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 297 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
   Paquete / Cubierta: TO-220
 

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NCE8290B Datasheet (PDF)

 ..1. Size:352K  ncepower
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NCE8290B

Pb Free Producthttp://www.ncepower.com NCE8290BNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features VDS =82V,ID =90A Schematic diagram RDS(ON)

 7.1. Size:375K  ncepower
nce8290.pdf pdf_icon

NCE8290B

Pb Free Producthttp://www.ncepower.com NCE8290NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 82V,ID =90A RDS(ON)

 7.2. Size:353K  ncepower
nce8290ac.pdf pdf_icon

NCE8290B

http://www.ncepower.com NCE8290ACNCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290AC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Schematic diagram General Features VDS =82V,ID =90A RDS(ON)

 8.1. Size:612K  ncepower
nce8295ag.pdf pdf_icon

NCE8290B

http://www.ncepower.comNCE8295AGNCE N-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE8295AG uses advanced trench technology and design V =82V,I =95ADS Dto provide excellent R with low gate charge. This device is R

Otros transistores... NCE72R60D , NCE75H21 , NCE75H21D , NCE75H21T , NCE75H25 , NCE75H25T , NCE75H35TC , NCE8290 , K3569 , NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL , NCE82H160 , NCE82H160D , NCE85H21TC , NCE85H25 .

History: AO4294 | 2SK1608 | SM1A18NSQG | FHF10N65A | IPB031NE7N3G | NCE8205I

 

 
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