NCE85H25T Todos los transistores

 

NCE85H25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE85H25T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 350 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 250 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 863 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-247
 

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NCE85H25T Datasheet (PDF)

 ..1. Size:382K  ncepower
 nce85h25t.pdf pdf_icon

NCE85H25T

http://www.ncepower.com NCE85H25TNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 6.1. Size:297K  ncepower
 nce85h25.pdf pdf_icon

NCE85H25T

http://www.ncepower.com NCE85H25NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 85V,ID =250A RDS(ON)

 7.1. Size:305K  ncepower
 nce85h21.pdf pdf_icon

NCE85H25T

Pb Free Producthttp://www.ncepower.com NCE85H21NCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210ANote5 Schematic diagram RDS(ON)

 7.2. Size:322K  ncepower
 nce85h21c.pdf pdf_icon

NCE85H25T

Pb Free Producthttp://www.ncepower.com NCE85H21CNCE N-Channel Enhancement Mode Power MOSFET Description The NCE85H21C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features VDSS =85V,ID =210A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... NCE8295AG , NCE8295AI , NCE82H140 , NCE82H140LL , NCE82H160 , NCE82H160D , NCE85H21TC , NCE85H25 , 12N60 , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K , NCEA15P30K , NCEA2301 , NCEA4080K .

History: FMI12N50E | IXTT30N60P | IXTT500N04T2 | PHP191NQ06LT

 

 
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