NCEA60P82AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEA60P82AK

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 82 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 356 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: TO-252

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NCEA60P82AK datasheet

 ..1. Size:837K  ncepower
 ncea60p82ak.pdf pdf_icon

NCEA60P82AK

NCEA60P82AK http //www.ncepower.com NCE Automotive P-Channel Enhancement Mode Power MOSFET Description The NCEA60P82AK uses advanced trench technology and design to provide excellent R with low gate charge .This device is well DS(ON) suited for high current load applications. General Features Schematic diagram V =-60V,I =-82A DS D R

 8.1. Size:900K  ncepower
 ncea6058k.pdf pdf_icon

NCEA60P82AK

http //www.ncepower.com NCEA6058K NCE Automotive N-Channel Enhancement Mode Power MOSFET Description The NCEA6058K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =64A DS D R

 8.2. Size:811K  ncepower
 ncea60nd08s.pdf pdf_icon

NCEA60P82AK

NCEA60ND08S http //www.ncepower.com NCE Automotive N-Channel Enhancement Mode Power MOSFET General Features V = 60V,I =8A DS D Description R

 8.3. Size:1045K  ncepower
 ncea6050ka.pdf pdf_icon

NCEA60P82AK

MOSTRAR MÁS

Otros transistores... NCEA4080K, NCEA40P25G, NCEA6042AG, NCEA6050KA, NCEA6058K, NCEA6080K, NCEA60ND08S, NCEA60ND18G, AON7506, NCEA65NF036T, NCEA65NF036T4, NCEA85H25, NCEAP0135AK, NCEAP016N10LL, NCEAP016N60VD, NCEAP016N85LL, NCEAP0178AK