NCEA60P82AK Todos los transistores

 

NCEA60P82AK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEA60P82AK
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 150 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 82 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
   Carga de la puerta (Qg): 62.1 nC
   Tiempo de subida (tr): 20 nS
   Conductancia de drenaje-sustrato (Cd): 356 pF
   Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
   Paquete / Cubierta: TO-252

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NCEA60P82AK Datasheet (PDF)

 ..1. Size:837K  ncepower
ncea60p82ak.pdf

NCEA60P82AK
NCEA60P82AK

NCEA60P82AKhttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA60P82AK uses advanced trench technology and designto provide excellent R with low gate charge .This device is wellDS(ON)suited for high current load applications.General FeaturesSchematic diagram V =-60V,I =-82ADS DR

 8.1. Size:900K  ncepower
ncea6058k.pdf

NCEA60P82AK
NCEA60P82AK

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 8.2. Size:811K  ncepower
ncea60nd08s.pdf

NCEA60P82AK
NCEA60P82AK

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 8.3. Size:1045K  ncepower
ncea6050ka.pdf

NCEA60P82AK
NCEA60P82AK

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

 8.4. Size:724K  ncepower
ncea60nd18g.pdf

NCEA60P82AK
NCEA60P82AK

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

 8.5. Size:929K  ncepower
ncea6080k.pdf

NCEA60P82AK
NCEA60P82AK

http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR

 8.6. Size:623K  ncepower
ncea6042ag.pdf

NCEA60P82AK
NCEA60P82AK

http://www.ncepower.comNCEA6042AGNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =42ADS DDescriptionR

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