FQB22P10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQB22P10
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: TO263 D2PAK

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FQB22P10 Datasheet (PDF)

..1. Size:955K fairchild semi
fqb22p10tm fqb22p10 fqi22p10.pdf

October 2008QFETFQB22P10 / FQI22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been espe

..2. Size:1079K onsemi
fqb22p10.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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fqb22p10tm f085.pdf

February 2009QFETFQB22P10TM_F085100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been especia

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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