FQB22P10 Todos los transistores

 

FQB22P10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FQB22P10

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm

Encapsulados: TO263 D2PAK

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FQB22P10 datasheet

 ..1. Size:955K  fairchild semi
fqb22p10tm fqb22p10 fqi22p10.pdf pdf_icon

FQB22P10

October 2008 QFET FQB22P10 / FQI22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been espe

 ..2. Size:1079K  onsemi
fqb22p10.pdf pdf_icon

FQB22P10

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.1. Size:657K  fairchild semi
fqb22p10tm f085.pdf pdf_icon

FQB22P10

February 2009 QFET FQB22P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especia

Otros transistores... FQB12P20 , FQB19N20 , SDD05N70 , FQB19N20C , SDD05N04 , FQB19N20L , SDD04N65 , FQB1P50 , AO4468 , FQB22P10TMF085 , FQB25N33TMF085 , FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 .

History: SI2336DS | CPC3701 | FS1KM-18A | BSD235C | HM1404C | SML4025BN

 

 

 

 

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