NCEAP25N10AK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP25N10AK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 123.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de NCEAP25N10AK MOSFET
- Selecciónⓘ de transistores por parámetros
NCEAP25N10AK datasheet
nceap25n10ak.pdf
http //www.ncepower.com NCEAP25N10AK NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AK uses Super Trench II technology that is V =100V,I =37A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5
nceap25n10ad.pdf
NCEAP25N10AD http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AD uses Super Trench II technology that is V =100V,I =37A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V =4.5
nceap25n10ag.pdf
http //www.ncepower.com NCEAP25N10AG NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP25N10AG uses Super Trench II technology that is V =100V,I =32A DS D uniquely optimized to provide the most efficient high frequency R =21m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =26m (typical) @ V
nceap020n10ll.pdf
NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g
nceap15t14.pdf
http //www.ncepower.com NCEAP15T14 NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.8m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R
nceap0178ak.pdf
http //www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency switc
nceap40t20all.pdf
http //www.ncepower.com NCEAP40T20ALL NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exce
nceap4065qu.pdf
http //www.ncepower.com NCEAP4065QU NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4065QU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =40V,I =110A DS D frequency switching performance. Both conduction and R =2.2m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an ex
nceap01p35ak.pdf
http //www.ncepower.com NCEAP01P35AK NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP01P35AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw
nceap40t13agu.pdf
http //www.ncepower.com NCEAP40T13AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excel
nceap016n60vd.pdf
http //www.ncepower.com NCEAP016N60VD NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP016N60VD uses Super Trench II technology that is V =60V,I =315A(Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power
nceap40p60g.pdf
http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m
nceap60t15g.pdf
http //www.ncepower.com NCEAP60T15G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T15G uses Super Trench technology that is V =60V,I =196A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R
nceap035n85gu.pdf
http //www.ncepower.com NCEAP035N85GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP035N85GU uses Super Trench II technology that is V =85V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =2.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate ch
nceap020n85ll.pdf
NCEAP020N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =295A DS D uniquely optimized to provide the most efficient high frequency R =1.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent ga
nceap40nd80ag.pdf
NCEAP40ND80AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R p
nceap6055agu.pdf
http //www.ncepower.com NCEAP6055AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6055AGU uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =7.7m (typical) @ V =4.5V DS
nceap40t35all.pdf
http //www.ncepower.com NCEAP40T35ALL NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.63m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exc
nceap40pt15g.pdf
http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V
nceap030n85ll.pdf
http //www.ncepower.com NCEAP030N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =2.65m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g
nceap4045agu.pdf
http //www.ncepower.com NCEAP4045AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4045AGU uses Super Trench technology that is uniquely V =40V,I =50A DS D optimized to provide the most efficient high frequency switching R =6.7m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c
nceap40p80k.pdf
http //www.ncepower.com NCEAP40P80K NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency swit
nceap40t14ak.pdf
NCEAP40T14AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T14AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq
nceap40nd40g.pdf
http //www.ncepower.com NCEAP40ND40G NCE Automotive N-Channel Super Trench Power MOSFET General Features Description V =40V,I =43A DS D The NCEAP40ND40G uses Super Trench technology that is R =8.2m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =10.4m (typical) @ V =4.5V DS(ON) GS switching performance. Both conduction and swi
nceap40t11ak.pdf
NCEAP40T11AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and DS(ON) Q . This device is ideal for high-freq
nceap60t20d.pdf
http //www.ncepower.com NCEAP60T20D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60T20D uses Super Trench technology that is uniquely V =60V,I =250A DS D optimized to provide the most efficient high frequency switching R =1.8m (typical) @ V =10V DS(ON) GS performance. Both conduction and switching power losses are Excellent gate c
nceap40t15gu.pdf
http //www.ncepower.com NCEAP40T15GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited) DS D optimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10V DS(ON) GS performance. Both conduction and switching power losses are R =
nceap0135ak.pdf
http //www.ncepower.com NCEAP0135AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0135AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . DS(ON) g This device is ideal for high-frequ
nceap40t35avd.pdf
http //www.ncepower.com NCEAP40T35AVD NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.68m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
nceap018n85ll.pdf
http //www.ncepower.com NCEAP018N85LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N85LL uses Super Trench II technology that is V =85V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate c
nceap018n60gu.pdf
NCEAP018N60GU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP018N60GU uses Super Trench II technology that is V =60V,I =256A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.6 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power E
nceap016n10ll.pdf
http //www.ncepower.com NCEAP016N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
nceap60nd30ag.pdf
http //www.ncepower.com NCEAP60ND30AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND30AG uses Super Trench technology that is V =60V,I =40A DS D uniquely optimized to provide the most efficient high frequency R =12m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =15m (typical) @ V =4.5V DS
nceap40t20agu.pdf
http //www.ncepower.com NCEAP40T20AGU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.95m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Exc
nceap4075gu.pdf
http //www.ncepower.com NCEAP4075GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4075GU uses Super Trench technology that is V =40V,I =86A DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =6.1m (typical) @ V =4.5V DS(ON
nceap60p90ak.pdf
NCEAP60P90AK http //www.ncepower.com NCE Automotive P-Channel Super Trench Power MOSFET General Features Description V =-60V,I =-90A DS D The NCEAP60P90AK uses Super Trench technology that is R =7.6m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =9.2m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and
nceap4090agu.pdf
http //www.ncepower.com NCEAP4090AGU NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP4090AGU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high V =40V,I =125A DS D frequency switching performance. Both conduction and R =2.9m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to an
nceap016n85ll.pdf
NCEAP016N85LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =385A DS D uniquely optimized to provide the most efficient high frequency R =1.2m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excel
nceap023n10ll.pdf
NCEAP023N10LL NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =300A DS D uniquely optimized to provide the most efficient high frequency R =1.7m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM
nceap020n60gu.pdf
http //www.ncepower.com NCEAP020N60GU NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP020N60GU uses Super Trench II technology that is V =60V,I =230A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate
nceap018n60agu.pdf
NCEAP018N60AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =270A (Silicon Limited) DS D The NCEAP018N60AGU uses Super Trench II technology that is R =1.4 m (typical) @ V =10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =4.5V DS(ON) GS switching perfor
nceap40t11k.pdf
NCEAP40T11K http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This DS(ON) g device is ideal for high-freq
nceap40pt12k.pdf
http //www.ncepower.com NCEAP40PT12K NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.9m (t
nceap40nd80g.pdf
http //www.ncepower.com NCEAP40ND80G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND80G uses Super Trench technology that is V =40V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5V DS(
nceap30t17gu.pdf
http //www.ncepower.com NCEAP30T17GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP30T17GU uses Super Trench technology that is V =30V,I =290A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =0.97m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power R =1.25m ,
nceap026n10t.pdf
http //www.ncepower.com NCEAP026N10T NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP026N10T uses Super Trench II technology that is V =100V,I =245A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.15m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power
nceap40t11ag.pdf
http //www.ncepower.com NCEAP40T11AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell
nceap60t12ak.pdf
NCEAP60T12AK http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP60T12AK uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =150A DS D switching performance. Both conduction and switching power R
nceap6050aqu.pdf
http //www.ncepower.com NCEAP6050AQU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6050AQU uses Super Trench technology that is V =60V,I =68A DS D uniquely optimized to provide the most efficient high frequency R =6.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =7.7m (typical) @
nceap40t17ad.pdf
http //www.ncepower.com NCEAP40T17AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellen
nceap6035ag.pdf
http //www.ncepower.com NCEAP6035AG NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6035AG uses Super Trench technology that is V =60V,I =48A DS D uniquely optimized to provide the most efficient high frequency R =9.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =12.5m (typical) @ V =4.5V DS(O
nceap40p60k.pdf
http //www.ncepower.com NCEAP40P60K NCE P-Channel Super Trench Power MOSFET General Features Description V =-40V,I =-73A DS D The NCEAP40P60K uses Super Trench technology that is R =8.8m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =12.5m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and switching po
nceap60nd60g.pdf
NCEAP60ND60G http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP60ND60G uses Super Trench technology that is V =60V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =7.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R
nceap16n85ak.pdf
http //www.ncepower.com NCEAP16N85AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP16N85AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency sw
nceap60t12ad.pdf
NCEAP60T12AD http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP60T12AD uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =150A DS D switching performance. Both conduction and switching power R
nceap40pt15d.pdf
http //www.ncepower.com NCEAP40PT15D NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5
nceap15t14d.pdf
http //www.ncepower.com NCEAP15T14D NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =150V,I =140A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x
nceap025n60ag.pdf
http //www.ncepower.com NCEAP025N60AG NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m
nceap4040q.pdf
http //www.ncepower.com NCEAP4040Q NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4040Q uses Super Trench technology that is V =40V,I =42A DS D uniquely optimized to provide the most efficient high R =7.5m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =9.8m (typical) @ V =4.5V DS(ON) GS switching p
nceap40t20ad.pdf
http //www.ncepower.com NCEAP40T20AD NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.3m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excelle
nceap40t17ag.pdf
NCEAP40T17AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =1.4m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excell
nceap055n12d.pdf
http //www.ncepower.com NCEAP055N12D NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =120V,I =128A DS D uniquely optimized to provide the most efficient high frequency R =5.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gat
nceap01nd35ag.pdf
http //www.ncepower.com NCEAP01ND35AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35A DS D uniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =27m (typical) @ V =4.5V DS(ON) GS lo
nceap40p80g.pdf
http //www.ncepower.com NCEAP40P80G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80A DS D optimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are R =9.0m (typical)
nceap6090agu.pdf
NCEAP6090AGU http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP6090AGU uses Super Trench technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses R =3.5m (typical) @ V =
nceap15nd10ag.pdf
http //www.ncepower.com NCEAP15ND10AG NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEAP15ND10AG uses Super Trench II technology that V =100V,I =46A DS D is uniquely optimized to provide the most efficient high R =13.0m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =16.5m (typical) @ V =4.5V DS(ON
nceap40nd40ag.pdf
NCEAP40ND40AG http //www.ncepower.com NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43A DS D uniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charg
nceap4045gu.pdf
http //www.ncepower.com NCEAP4045GU NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP4045GU uses Super Trench technology that is V =40V,I =50A DS D uniquely optimized to provide the most efficient high frequency R =6.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =8.5m (typical) @ V =4.5V DS(O
nceap40nd60ag.pdf
NCEAP40ND60AG http //www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description General Features The NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65A DS D uniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses Excellent gate charge x R produ
nceap028n85d.pdf
NCEAP028N85D http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP028N85D uses Super Trench II technology that is V =85V,I =220A DS D uniquely optimized to provide the most efficient high frequency R =2.4m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate cha
nceap40t14g.pdf
http //www.ncepower.com NCEAP40T14G NCE Automotive N-Channel Super Trench Power MOSFET Description General Features The NCEAP40T14G uses Super Trench technology that is V =40V,I =210A DS D uniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5V DS(
Otros transistores... NCEAP030N85LL, NCEAP035N85GU, NCEAP15ND10AG, NCEAP15T14, NCEAP15T14D, NCEAP16N85AK, NCEAP25N10AD, NCEAP25N10AG, IRF1405, NCEAP30T17GU, NCEAP4040Q, NCEAP4045AGU, NCEAP4045GU, NCEAP4065QU, NCEAP4090AGU, NCEAP40ND40AG, NCEAP40ND40G
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
2sd218 | bc547 характеристики | me15n10-g | 2n2905 equivalent | 2sa640 | 2sb527 | 30g124 | 75339p mosfet