NCEAP4090AGU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEAP4090AGU
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 102 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 125 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 840 pF
Resistencia entre drenaje y fuente RDS(on): 0.0034 Ohm
Paquete / Cubierta: PDFN5X6-8L
Búsqueda de reemplazo de MOSFET NCEAP4090AGU
NCEAP4090AGU Datasheet (PDF)
nceap4090agu.pdf
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http://www.ncepower.com NCEAP4090AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP4090AGU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =40V,I =125ADS Dfrequency switching performance. Both conduction and R =2.9m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an
nceap40t20all.pdf
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http://www.ncepower.comNCEAP40T20ALLNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe series of devices uses Super Trench technology that is V =40V,I =360A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =1.1m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exce
nceap4065qu.pdf
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http://www.ncepower.com NCEAP4065QUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP4065QU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =40V,I =110ADS Dfrequency switching performance. Both conduction and R =2.2m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an ex
nceap40t13agu.pdf
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http://www.ncepower.com NCEAP40T13AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T13AGU uses Super Trench technology that is V =40V,I =165A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excel
nceap40p60g.pdf
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http://www.ncepower.comNCEAP40P60GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68ADS Doptimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are minimized R =12.5m
nceap40nd80ag.pdf
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NCEAP40ND80AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80AG uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.7m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R p
nceap40t35all.pdf
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http://www.ncepower.comNCEAP40T35ALLNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35ALL uses Super Trench technology that is V =40V,I =570A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.63m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc
nceap40pt15g.pdf
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http://www.ncepower.com NCEAP40PT15GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V
nceap4045agu.pdf
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http://www.ncepower.comNCEAP4045AGUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP4045AGU uses Super Trench technology that is uniquely V =40V,I =50ADS Doptimized to provide the most efficient high frequency switching R =6.7m (typical) @ V =10VDS(ON) GSperformance. Both conduction and switching power losses are Excellent gate c
nceap40p80k.pdf
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http://www.ncepower.comNCEAP40P80KNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP40P80K uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency swit
nceap40t14ak.pdf
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NCEAP40T14AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T14AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40nd40g.pdf
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http://www.ncepower.comNCEAP40ND40GNCE Automotive N-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =40V,I =43ADS DThe NCEAP40ND40G uses Super Trench technology that isR =8.2m (typical) @ V =10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =10.4m (typical) @ V =4.5VDS(ON) GSswitching performance. Both conduction and swi
nceap40t15agu.pdf
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NCEAP40T15AGUhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T15AGU uses Super Trench technology that is V =40V,I =240A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.35m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses
nceap40t11ak.pdf
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NCEAP40T11AKhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching power lossesare minimized due to an extremely low combination of R andDS(ON)Q . This device is ideal for high-freq
nceap40t15gu.pdf
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http://www.ncepower.com NCEAP40T15GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T15GU uses Super Trench technology that is uniquely V =40V,I =240A (Silicon Limited)DS Doptimized to provide the most efficient high frequency switching R =1.09m , typical@ V =10VDS(ON) GSperformance. Both conduction and switching power losses are R =
nceap40t35avd.pdf
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http://www.ncepower.comNCEAP40T35AVDNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T35AVD uses Super Trench technology that is V =40V,I =480A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.68m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate
nceap40t20agu.pdf
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http://www.ncepower.comNCEAP40T20AGUNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AGU uses Super Trench technology that is V =40V,I =300A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =0.95m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Exc
nceap40t11g.pdf
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http://www.ncepower.comNCEAP40T11GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T11G uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =2.2m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses R =3.3m
nceap40t11k.pdf
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NCEAP40T11Khttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionThe NCEAP40T11K uses Super Trench technology that is uniquelyoptimized to provide the most efficient high frequency switchingperformance. Both conduction and switching power losses areminimized due to an extremely low combination of R and Q . ThisDS(ON) gdevice is ideal for high-freq
nceap40pt12k.pdf
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http://www.ncepower.com NCEAP40PT12KNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =5.9m (t
nceap40nd80g.pdf
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http://www.ncepower.com NCEAP40ND80GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND80G uses Super Trench technology that is V =40V,I =90ADS Duniquely optimized to provide the most efficient high frequency R =4.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =5.5m (typical) @ V =4.5VDS(
nceap40t11ag.pdf
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http://www.ncepower.comNCEAP40T11AGNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T11AG uses Super Trench technology that is V =40V,I =150A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =2.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40t17ad.pdf
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http://www.ncepower.com NCEAP40T17ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AD uses Super Trench technology that is V =40V,I =275A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellen
nceap40p60k.pdf
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http://www.ncepower.comNCEAP40P60KNCE P-Channel Super Trench Power MOSFETGeneral FeaturesDescription V =-40V,I =-73ADS DThe NCEAP40P60K uses Super Trench technology that isR =8.8m (typical) @ V =-10VDS(ON) GSuniquely optimized to provide the most efficient high frequencyR =12.5m (typical) @ V =-4.5VDS(ON) GSswitching performance. Both conduction and switching po
nceap40pt15d.pdf
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http://www.ncepower.comNCEAP40PT15DNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5
nceap4040q.pdf
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http://www.ncepower.comNCEAP4040QNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP4040Q uses Super Trench technology that is V =40V,I =42ADS Duniquely optimized to provide the most efficient high R =7.5m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =9.8m (typical) @ V =4.5VDS(ON) GSswitching p
nceap40t20ad.pdf
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http://www.ncepower.comNCEAP40T20ADNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T20AD uses Super Trench technology that is V =40V,I =295A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.3m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excelle
nceap40t17ag.pdf
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NCEAP40T17AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEAP40T17AG uses Super Trench technology that is V =40V,I =235A (Silicon Limited)DS Duniquely optimized to provide the most efficient high frequencyR =1.4m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excell
nceap40p80g.pdf
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http://www.ncepower.comNCEAP40P80GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80ADS Doptimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are R =9.0m (typical)
nceap40nd40ag.pdf
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NCEAP40ND40AGhttp://www.ncepower.comNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND40AG uses Super Trench technology that is V =40V,I =43ADS Duniquely optimized to provide the most efficient high frequency R =9.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charg
nceap4045gu.pdf
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http://www.ncepower.com NCEAP4045GUNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP4045GU uses Super Trench technology that is V =40V,I =50ADS Duniquely optimized to provide the most efficient high frequency R =6.0m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =8.5m (typical) @ V =4.5VDS(O
nceap40nd60ag.pdf
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NCEAP40ND60AGhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40ND60AG uses Super Trench technology that is V =40V,I =65ADS Duniquely optimized to provide the most efficient high frequency R =8.3m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power losses Excellent gate charge x R produ
nceap40t14g.pdf
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http://www.ncepower.comNCEAP40T14GNCE Automotive N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40T14G uses Super Trench technology that is V =40V,I =210ADS Duniquely optimized to provide the most efficient high frequency R =1.6m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =2.3m (typical) @ V =4.5VDS(
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