NCEAP40P80G Todos los transistores

 

NCEAP40P80G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCEAP40P80G
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 880 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN5X6-8L
 

 Búsqueda de reemplazo de NCEAP40P80G MOSFET

   - Selección ⓘ de transistores por parámetros

 

NCEAP40P80G Datasheet (PDF)

 ..1. Size:674K  ncepower
nceap40p80g.pdf pdf_icon

NCEAP40P80G

http://www.ncepower.comNCEAP40P80GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80ADS Doptimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are R =9.0m (typical)

 4.1. Size:907K  ncepower
nceap40p80k.pdf pdf_icon

NCEAP40P80G

http://www.ncepower.comNCEAP40P80KNCE Automotive P-Channel Super Trench Power MOSFETDescriptionThe NCEAP40P80K uses Super Trench technology that isuniquely optimized to provide the most efficient high frequencyswitching performance. Both conduction and switching powerlosses are minimized due to an extremely low combination ofR and Q . This device is ideal for high-frequency swit

 6.1. Size:772K  ncepower
nceap40p60g.pdf pdf_icon

NCEAP40P80G

http://www.ncepower.comNCEAP40P60GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68ADS Doptimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10VDS(ON) GSperformance. Both conduction and switching power losses are minimized R =12.5m

 6.2. Size:676K  ncepower
nceap40pt15g.pdf pdf_icon

NCEAP40P80G

http://www.ncepower.com NCEAP40PT15GNCE Automotive P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

Otros transistores... NCEAP4090AGU , NCEAP40ND40AG , NCEAP40ND40G , NCEAP40ND60AG , NCEAP40ND80AG , NCEAP40ND80G , NCEAP40P60G , NCEAP40P60K , AO3407 , NCEAP40P80K , NCEAP40PT12K , NCEAP40PT15D , NCEAP40PT15G , NCEAP40T11AG , NCEAP40T11AK , NCEAP40T11G , NCEAP40T11K .

History: DH045N04P | IRFZ34EPBF | OSG70R280KF

 

 
Back to Top

 


 
.