NCEAP40PT15D Todos los transistores

 ..1. Size:697K  ncepower
 nceap40pt15d.pdf

http //www.ncepower.com NCEAP40PT15D NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15D uses Super Trench technology that is V =-40V,I =-195A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5

 3.1. Size:676K  ncepower
 nceap40pt15g.pdf

http //www.ncepower.com NCEAP40PT15G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT15G uses Super Trench technology that is V =-40V,I =-160A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =3.9m (typical) @ V =-4.5V

 4.1. Size:703K  ncepower
 nceap40pt12k.pdf

http //www.ncepower.com NCEAP40PT12K NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40PT12K uses Super Trench technology that is V =-40V,I =-160A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =4.1m (typical) @ V =-10V DS(ON) GS switching performance. Both conduction and switching power R =5.9m (t

 6.1. Size:772K  ncepower
 nceap40p60g.pdf

http //www.ncepower.com NCEAP40P60G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P60G uses Super Trench technology that is uniquely V =-40V,I =-68A DS D optimized to provide the most efficient high frequency switching R =8.8m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are minimized R =12.5m

 6.2. Size:907K  ncepower
 nceap40p80k.pdf

http //www.ncepower.com NCEAP40P80K NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for high-frequency swit

 6.3. Size:482K  ncepower
 nceap40p60k.pdf

http //www.ncepower.com NCEAP40P60K NCE P-Channel Super Trench Power MOSFET General Features Description V =-40V,I =-73A DS D The NCEAP40P60K uses Super Trench technology that is R =8.8m (typical) @ V =-10V DS(ON) GS uniquely optimized to provide the most efficient high frequency R =12.5m (typical) @ V =-4.5V DS(ON) GS switching performance. Both conduction and switching po

 6.4. Size:674K  ncepower
 nceap40p80g.pdf

http //www.ncepower.com NCEAP40P80G NCE Automotive P-Channel Super Trench Power MOSFET Description General Features The NCEAP40P80G uses Super Trench technology that is uniquely V =-40V,I =-80A DS D optimized to provide the most efficient high frequency switching R =6.3m (typical) @ V =-10V DS(ON) GS performance. Both conduction and switching power losses are R =9.0m (typical)